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Method for simultaneously manufacturing through holes and grooves on semiconductor devices

A semiconductor and trench technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as time-consuming, costly, and complicated processes

Active Publication Date: 2014-12-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Although using figure 1 The method can form via holes and trenches in the dielectric layer, but the process is more complicated, it needs to go through two photolithography processes, and it is realized step by step, which is time-consuming and costly

Method used

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  • Method for simultaneously manufacturing through holes and grooves on semiconductor devices
  • Method for simultaneously manufacturing through holes and grooves on semiconductor devices
  • Method for simultaneously manufacturing through holes and grooves on semiconductor devices

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0036] It can be seen from the background technology that when making through holes and grooves in the dielectric layer, two photolithography processes are required to form groove patterns on the metal hard mask of the dielectric layer and photolithography on the metal hard mask layer. A through hole pattern is formed on the glue layer (if there is a hard mask layer, the hard mask layer is also included), and then the dielectric layer is etched according to the two patterns to form grooves and through holes. This process has many and complicated steps, which increases the time for making via holes and trenches in the dielectric layer. In order to solve this problem, the present invention introduces the nanoimprint method into the process of making vias ...

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Abstract

The invention discloses a method for simultaneously manufacturing through holes and grooves on semiconductor devices. The method includes depositing a metal hard mask layer on a substrate layer provided on a semiconductor device, depositing a hard mask layer on the metal hard mask layer, and providing a stamp with patterns of grooves and through holes; stamping the stamp with the patterns of grooves and through holes on the substrate layer with the hard mask layer and the metal hard mask layer; etching the substrate layer by taking the stamped patterns of grooves and through holes on the substrate layer as mask, and forming grooves and through holes in the substrate layer. By the method, twice photo-etching processes can be avoided, and the through holes and the grooves can be manufactured on the semiconductor devices simultaneously.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a method for simultaneously manufacturing through holes and grooves on a semiconductor device. Background technique [0002] In the post-production process of semiconductor devices, it includes the method of making vias and trenches in the metal interconnection layer of semiconductor devices, that is, forming vias in dielectric layers made of silicon dioxide or low dielectric constant materials. holes and grooves. In this way, the formed through holes and trenches are filled with metal in subsequent processes, and metal interconnection lines are formed after polishing. [0003] In the traditional process of semiconductor devices, a step-by-step method is used to make via holes and trenches. With the development of semiconductor technology, when making vias and trenches, due to the metal hard mask compared to the hard mask made of silicon nitride, it has a high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768B29C59/02
Inventor 张海洋王冬江
Owner SEMICON MFG INT (SHANGHAI) CORP