Beam island tower shaped piezoresistive type three-axis micro-electro-mechanical system (MEMS) high-range acceleration sensor array

An acceleration sensor and piezoresistive technology, applied in the field of MEMS sensors, can solve the problems of low mechanical precision, large volume and mass, and large coupling of acceleration sensors, and achieve the effects of reasonable structure, excessive coupling and ingenious design.

Active Publication Date: 2013-02-13
ZHONGBEI UNIV
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Problems solved by technology

[0003] In order to solve the problems of excessive coupling, low mechanical precision, and excessive volume and quality of existing piezoresistive MEMS acceleration sensors, the present invention provides a beam-island tower-shaped piezoresistive three-axis MEMS high-range acceleration sensor array

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  • Beam island tower shaped piezoresistive type three-axis micro-electro-mechanical system (MEMS) high-range acceleration sensor array
  • Beam island tower shaped piezoresistive type three-axis micro-electro-mechanical system (MEMS) high-range acceleration sensor array
  • Beam island tower shaped piezoresistive type three-axis micro-electro-mechanical system (MEMS) high-range acceleration sensor array

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Embodiment Construction

[0014] Beam island tower-shaped piezoresistive three-axis MEMS high-range acceleration sensor array, including the first six-beam double-island T-shaped structure sensor, the second six-beam double-island T-shaped structure sensor, and the four-beam cone-truncated structure sensor;

[0015] The first six-beam double-island T-shaped structure sensor includes an X-axis acceleration sensor, a Z-axis low-range acceleration sensor, and a first square silicon-based frame 1;

[0016] The X-axis acceleration sensor includes a right rectangular mass block 2, a right connecting beam 3, an upper right detection beam 4, a lower right detection beam 5, and a first Whisper composed of first-fourth pressure sensitive elements 6-9. An electrified bridge; two rectangular mass blocks on the right are suspended on the right side of the inner cavity of the first square silicon-based frame 1; The long side on the right side of 2 is fixed to the right inner wall of the first square silicon-based fr...

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Abstract

The invention relates to a micro-electro-mechanical system (MEMS) sensor, in particular to a beam island tower shaped piezoresistive type three-axis MEMS high-range acceleration sensor array. By the beam island tower shaped piezoresistive type three-axis MEMS high-range acceleration sensor array, the problems of excessively large coupling, low mechanical precision and excessively large volume and quality of the traditional piezoresistive MEMS acceleration sensor are solved. The beam island tower shaped piezoresistive type three-axis MEMS high-range acceleration sensor array comprises a first six-beam double-island T-shaped structure sensor, a second six-beam double-island T-shaped structure sensor and a four-beam frustum structure sensor, wherein the first six-beam double-island T-shaped structure sensor comprises an X-axis acceleration sensor, a Z-axis low-range acceleration sensor and a first square silicon-based framework; and the second six-beam double-island T-shaped structure sensor comprises a Y-axis acceleration sensor, a Z-axis middle-range acceleration sensor and a second square silicon-based framework. The beam island tower shaped piezoresistive type three-axis MEMS high-range acceleration sensor array is suitable for measuring impact acceleration of high range.

Description

technical field [0001] The invention relates to MEMS sensors, in particular to a Liangdao tower-shaped piezoresistive three-axis MEMS high-range acceleration sensor array. Background technique [0002] MEMS (Micro-Electro-Mechanical Systems, Micro-Electro-Mechanical Systems) acceleration sensors are widely used in vehicles, testing, aerospace and other fields. MEMS acceleration sensors are usually divided into piezoelectric MEMS acceleration sensors, capacitive MEMS acceleration sensors, piezoresistive MEMS acceleration sensors, tunnel MEMS acceleration sensors and other types. Among them, the piezoresistive MEMS acceleration sensor has small size, no hysteresis, good dynamic response characteristics and output, wide frequency range, wide measurement acceleration range, direct output voltage signal, low mass production cost, and silicon integrated circuit plane technology A series of advantages such as good compatibility, the most widely used. The structures of the existin...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/12G01P15/18
Inventor 石云波刘俊唐军赵锐钱爰颖潘龙丽李杰张晓明杨卫郭涛马喜宏鲍爱达
Owner ZHONGBEI UNIV
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