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Reverse conducting IGBT (Insulated Gate Bipolar Translator) device and manufacturing method thereof

A reverse conduction and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as high process requirements and corrosion, and achieve the effects of high carrier mobility, fast turn-off speed, and low contact barrier

Active Publication Date: 2015-05-20
JIANGSU R & D CENTER FOR INTERNET OF THINGS +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method requires the etching of the metal on the back, and if wet etching is used, it will corrode the metal on the front, so only dry etching can be used, which requires relatively high process requirements.

Method used

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  • Reverse conducting IGBT (Insulated Gate Bipolar Translator) device and manufacturing method thereof
  • Reverse conducting IGBT (Insulated Gate Bipolar Translator) device and manufacturing method thereof
  • Reverse conducting IGBT (Insulated Gate Bipolar Translator) device and manufacturing method thereof

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Embodiment Construction

[0038] The present invention will be further described below in conjunction with specific drawings.

[0039] Such as Figure 1 to Figure 10 As shown: taking an N-type IGBT device as an example, the present invention includes an N-drift region 1, a gate oxide layer 2, a polycrystalline gate 3, an emitter 4, a gate electrode 5, a P-type base region 6, an N+ emitter region 7, a A collector metal region 8 , an N+ collector doped region 9 , a second collector metal region 10 , and a P+ collector region 11 .

[0040] Such as figure 1 , Figure 10 As shown, on the cross-section of the IGBT device, the semiconductor substrate includes an N-drift region 1, and the N-drift region 1 has a front side and a back side parallel to each other; a P-type base region 6 is provided in the N-drift region 1, The P-type base region 6 extends from the front of the N-drift region 1 to the back direction, and the extension distance of the P-type base region 6 is less than the thickness of the N-drif...

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Abstract

The invention relates to a reverse conducting IGBT (Insulated Gate Bipolar Translator) device which comprises a first conductive type drift region. A second conductive type base region is arranged in the first conductive type drift region. The upper part of the second conductive type base region is provided with a first conductive type emitter region; a gate oxide layer is arranged above the second conductive type base region and the first conductive type drift region; a polycrystalline gate is arranged on the gate oxide layer and provided with a gate electrode; and an emitting electrode is arranged on the second conductive type base region. The back of the first conductive type drift region is provided with a second conductive type collector region and a first conductive type collector doped region, and the first conductive type collector doped region is located at one side of the second conductive type collector region. A first collector metal region is deposited on the back of the first conductive type drift region; the second conductive type collector region is covered by one surface of the first collector metal region; a second collector metal region is deposited on the other surface of the first collector metal region; and the second conductive type collector region and the first conductive type collector doped region are covered by the second collector metal region. Through the reverse conducting IGBT device, a high impurity activation rate can be obtained at low temperature.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a reverse conduction IGBT device and a manufacturing method thereof, belonging to the technical field of IGBTs. Background technique [0002] IGBT is the acronym for Insulated Gate Bipolar Transistor. It is a voltage-controlled power device and is widely used as a high-voltage switch. [0003] When the traditional IGBT is subjected to reverse voltage, the collector junction is reverse-biased and cannot be turned on. The reverse conduction IGBT allows current to flow from the emitter to the collector when the IGBT is subjected to reverse voltage. The idea of ​​reverse conduction IGBT saves chip area, packaging, and testing costs, and reduces device costs. In addition, it also has low loss, good SOA (service-oriented architecture) characteristics, positive temperature coefficient, and good soft-off characteristics, short-circuit characteristics and good...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/43H01L29/08H01L21/331H01L21/28
Inventor 徐承福朱阳军胡爱斌
Owner JIANGSU R & D CENTER FOR INTERNET OF THINGS
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