41results about How to "Fast composite" patented technology

The invention discloses a molybdenum disulfide nanosheet / porous graphitized biocarbon composite material and a preparation method and application thereof. The composite material takes porous graphitized biocarbon as a carrier, and the surface of the composite material is embedded with a molybdenum disulfide nanosheet. The preparation method comprises the following steps: preparing porous graphitized biochar powder; ultrasonic dispersing the porous graphitized biochar powder in water, adding sodium molybdate dihydrate and thioacetamide for hydrothermal reaction, centrifuging, washing and dryingto obtain the composite material. The composite material has the advantages of large specific surface area, good conductivity, low photogenerated electron-hole pair recombination rate, high photocatalytic activity, high universality and the like, and the preparation method has the advantages of simple process, simple and convenient operation and low cost, environmental protection, and no toxic and harmful by-products, suitability for large-scale preparation, and the method meets the requirement of actual production. The composite material can rapidly and efficiently treat antibiotics in the environment, and has good application value and application prospect.

The invention discloses a magnetic TiO 2 (R) Composite materials and their preparation methods and applications. The magnetic composite photocatalyst consists of rutile phase TiO 2 (TiO 2 (R)) cladding gamma ‑Fe 2 o 3 / FeTiO 3 Surface, and a small amount of carbon (C) dispersed in the material. The preparation method includes firstly preparing MIL-88A by hydrothermal method, then coating polyacrylic acid (PAA) on its surface and compounding it with a titanium dioxide precursor, and finally calcining at high temperature under an inert atmosphere to obtain a magnetic composite photocatalyst. The magnetic composite photocatalyst of the present invention can be applied to the photocatalytic degradation of rhodamine B (RhB) wastewater, and has the advantages of unique morphology, uniform particle size, excellent magnetic recovery performance, stable photocatalytic performance and high degradation efficiency for RhB.

The invention belongs to the field of nanomaterial preparation and discloses a CeO 2 @MoS 2 / g‑C 3 N 4 Composite photocatalytic material and preparation method thereof, comprising: (1) adding cerium oxide hexahydrate to a mixed solution of butylamine and toluene, after hydrothermal treatment of the obtained mixed solution, calcining the reaction product to obtain CeO 2 Nanocrystal; (2) sodium molybdate dihydrate, g-C 3 N 4 The nanosheets were ultrasonically dispersed in a mixed solution of L-cysteine ​​and dimethyl sulfoxide, and the resulting mixed solution was hydrothermally treated to obtain MoS 2 / g‑C 3 N 4 Nanosheets; (3) CeO 2 Nanocrystals and MoS 2 / g‑C 3 N 4 Ultrasonic dispersion in methanol solution, after the methanol volatilizes, the resulting product is collected as CeO 2 ‑MoS 2 / g‑C 3 N 4 Composite material; (4) the CeO 2 ‑MoS 2 / g‑C 3 N 4 The composite material was placed in a tube furnace and calcined in a nitrogen atmosphere to obtain CeO 2 @MoS 2 / g‑C 3 N 4 Ternary composite photocatalyst. The preparation method of the invention is simple and highly controllable, and the obtained composite photocatalyst has excellent photocatalytic degradation performance.

The invention relates to the field of disposable sanitary products, in particular to a molding process of an ice-cooled explosive bead mask, which solves the technical problem of low production efficiency of the existing ice-cooled explosive bead mask. Including the following steps: the first step, the nose bridge strip is cut off after unwinding, and after cutting, it is input and adhered to a strip of non-woven fabric at intervals; The non-woven fabrics are respectively unrolled, and explosive beads are adhered to the inner non-woven fabric at intervals, and the strip-shaped non-woven fabric is clamped between the melt-blown non-woven fabric and the inner non-woven fabric to form the mask base material; The third step is to fold the middle of the mask base material and then flatten it; the fourth step is to hot-press the mask base material to form a peripheral indentation on the peripheral side of the mask, a restricted indentation surrounding the bridge of the nose, and an indentation surrounding the explosive beads. Positioning the indentation; the fifth step, the earband material is unrolled, cut, adsorbed and transported, and finally compounded on the mask substrate; the sixth step, slitting and output.

The invention discloses a graphene clad porous granular material and a preparation method thereof. By utilizing the in-situ reduction action of active metal on graphene oxide, partial reduction of the graphene oxide is realized in graphene oxide aqueous solution as well as cladding on the granular material, and the clad material is alloy grains (such as silicon alloy of aluminum, magnesium, ferrum, nickel and the like), of metal and silicon; moreover, reduction can be performed on the graphene oxide by metal elements; selective etching is performed on metal phases in the alloy grains clad with graphene through dealloying to realize the porous granular material. According to the structure of graphene clad porous silicon obtained by the method disclosed by the invention, not only can direct contact between electrolyte and the silicon be avoided but also the electrical conductivity of the silicon material can be improved, therefore the formation of excessive solid electrolyte thin films is avoided, and the electrochemical performance is improved truly.

The invention discloses a CIGS ultra-high and ultra-fast wide-waveband light position sensitive detector, and belongs to the technical field of position detectors. The CIGS ultra-high and ultra-fast wide-waveband light position sensitive detector comprises a photoresponse film layer, a first electrode and a second electrode, wherein the photoresponse film layer grows on a glass substrate; the first electrode and the second electrode are arranged on the photoresponse film layer and connected with a voltmeter or an oscilloscope in series by virtue of a wire; the photoresponse film layer comprises a metal back electrode Mo layer, a CIGS light absorption layer, a CdS transition layer, a ZnO window layer and an ITO transparent conductive layer which are sequentially arranged on the glass substrate; and the first electrode and the second electrode are arranged on the ITO transparent conductive layer. According to the position detector, the effects of a wide-waveband fast response and an ultrahigh signal can be achieved and the sensitivity is high.

The invention relates to a reverse conducting IGBT (Insulated Gate Bipolar Translator) device which comprises a first conductive type drift region. A second conductive type base region is arranged in the first conductive type drift region. The upper part of the second conductive type base region is provided with a first conductive type emitter region; a gate oxide layer is arranged above the second conductive type base region and the first conductive type drift region; a polycrystalline gate is arranged on the gate oxide layer and provided with a gate electrode; and an emitting electrode is arranged on the second conductive type base region. The back of the first conductive type drift region is provided with a second conductive type collector region and a first conductive type collector doped region, and the first conductive type collector doped region is located at one side of the second conductive type collector region. A first collector metal region is deposited on the back of the first conductive type drift region; the second conductive type collector region is covered by one surface of the first collector metal region; a second collector metal region is deposited on the other surface of the first collector metal region; and the second conductive type collector region and the first conductive type collector doped region are covered by the second collector metal region. Through the reverse conducting IGBT device, a high impurity activation rate can be obtained at low temperature.