cigs ultrahigh and ultrafast broadband optical position sensitive detector

A broadband and detector technology, applied in optical position-sensitive detectors, ultra-fast broadband optical position-sensitive detectors, and CIGS ultra-high fields, can solve linearity deterioration, limit detector detection range and detection accuracy , low sensitivity and other issues, to achieve the effect of good linear relationship, good conductive characteristics, and sensitive detection

Inactive Publication Date: 2018-10-26
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current position-sensitive detectors based on the lateral photovoltaic effect generally have the problem of low sensitivity. Although the sensitivity can be greatly improved by adding bias voltage modulation, this method also has a big drawback, that is, in the high-power laser Under illumination, the linearity becomes extremely poor, in other words, the voltage difference no longer exhibits a linear relationship with the illumination position
This phenomenon greatly limits the detection range and detection accuracy of such detectors

Method used

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  • cigs ultrahigh and ultrafast broadband optical position sensitive detector
  • cigs ultrahigh and ultrafast broadband optical position sensitive detector
  • cigs ultrahigh and ultrafast broadband optical position sensitive detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A photoresponsive thin film layer is grown on a glass substrate 1, and the photoresponsive thin film layer is sequentially composed of a metal back electrode Mo layer 2, a CIGS light absorption layer 3, a CdS transition layer 4, a ZnO window layer 5, and an ITO transparent layer from the glass substrate 1 to the top. The conductive layer 6 forms a heterojunction position-sensitive detector, connects the first electrode 7 and the second electrode 8 in series with the voltmeter 9, irradiates the laser 10 for lateral photovoltaic effect testing, obtains an LPV diagram, and replaces the laser 10 Power and wavelength, repeat the above operation, the obtained LPV change curve with the position of the laser beam shows that the CIGS structure device has an ultra-high response signal of the optical position sensitive detector within the measured range.

Embodiment 2

[0032] A photoresponsive thin film layer is grown on a glass substrate 1, and the photoresponsive thin film layer is sequentially composed of a metal back electrode Mo layer 2, a CIGS light absorption layer 3, a CdS transition layer 4, a ZnO window layer 5, and an ITO transparent layer from the glass substrate 1 to the top. The conductive layer 6 forms a heterojunction structure position sensitive detector, the first electrode 7 and the second electrode 8 are connected in series with the oscilloscope 11 with wires, and a chopper 12 is added before the laser 10 reaches the optical position sensitive detector to adjust the laser 10. The irradiation position is fixed, the laser is irradiated, the frequency of the chopper 12 is adjusted, and the response time diagram of the optical position sensitive detector can be obtained by the oscilloscope 11. After data processing and analysis, the optical position sensitive detector has an ultra-fast Response time.

[0033] pass image 3 I...

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Abstract

The invention discloses a CIGS ultra-high and ultra-fast wide-waveband light position sensitive detector, and belongs to the technical field of position detectors. The CIGS ultra-high and ultra-fast wide-waveband light position sensitive detector comprises a photoresponse film layer, a first electrode and a second electrode, wherein the photoresponse film layer grows on a glass substrate; the first electrode and the second electrode are arranged on the photoresponse film layer and connected with a voltmeter or an oscilloscope in series by virtue of a wire; the photoresponse film layer comprises a metal back electrode Mo layer, a CIGS light absorption layer, a CdS transition layer, a ZnO window layer and an ITO transparent conductive layer which are sequentially arranged on the glass substrate; and the first electrode and the second electrode are arranged on the ITO transparent conductive layer. According to the position detector, the effects of a wide-waveband fast response and an ultrahigh signal can be achieved and the sensitivity is high.

Description

technical field [0001] The invention belongs to the technical field of position detectors, and relates to optical position sensitive detectors, in particular to CIGS ultra-high and ultra-fast broadband optical position sensitive detectors. effect, high sensitivity. Background technique [0002] When a point light source illuminates a PN junction, a semiconductor heterojunction or a metal-semiconductor junction, due to the difference in carrier concentration between the illuminated area and the non-illuminated area, the voltage value can be measured by using two electrodes drawn from the same surface of the junction. One effect is called the lateral photovoltaic effect. As the point light source moves between the two electrodes, the voltage difference has a linear relationship with the position of the point light source. This feature makes the lateral photovoltaic effect widely used in position-sensitive detectors. [0003] The photoelectric detection position detector has...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09H01L31/032H01L31/0224
CPCH01L31/022408H01L31/0322H01L31/09Y02E10/541
Inventor 乔双冯凯雨李志强王淑芳傅广生
Owner HEBEI UNIVERSITY
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