Application of an IR-doped titanium-based tin dioxide electrode with photoelectrocatalytic properties in the degradation of organic wastewater

A technology for obtaining titanium-based tin dioxide and photoelectric catalysis, which is applied in the directions of oxidized water/sewage treatment, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc. The influence mechanism of electrode performance is not clear, etc.

Active Publication Date: 2020-03-10
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The oxygen evolution overpotential of titanium-based tin-based electrodes is high, and it is an ideal anode material in the electrochemical oxidation wastewater system, but its catalytic efficiency and service life still need to be improved, and

Method used

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  • Application of an IR-doped titanium-based tin dioxide electrode with photoelectrocatalytic properties in the degradation of organic wastewater
  • Application of an IR-doped titanium-based tin dioxide electrode with photoelectrocatalytic properties in the degradation of organic wastewater
  • Application of an IR-doped titanium-based tin dioxide electrode with photoelectrocatalytic properties in the degradation of organic wastewater

Examples

Experimental program
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Effect test

Embodiment 1

[0020] 1) Weigh chloroiridic acid and tin tetrachloride respectively according to the metal ion molar ratio of 1:15, dissolve them together in absolute ethanol, ultrasonically oscillate to dissolve them evenly, and then place them for 24 hours to obtain the coating solution;

[0021] 2) The industrial TA1 grade titanium plate was pre-degreased, sandblasted, etched with 20wt% boiling sulfuric acid for 40 min, and washed with water; then the coating solution obtained in step 1) was uniformly coated on the etched titanium substrate surface, and the coating amount Control the weight of iridium atoms per square centimeter on the titanium substrate to 0.4 mg, and then irradiate it with infrared light until it is solidified, then put it in a box-type resistance furnace at 500 ° C for 15 minutes, and then take it out of the furnace to cool;

[0022] 3) After repeating the operation 3~5 times according to step 2), anneal at a constant temperature of 500°C for 60min to obtain 6.25mol% Ir...

Embodiment 2

[0024] 1) Weigh chloroiridic acid and tin tetrachloride respectively according to the metal ion molar ratio of 1:7, dissolve them together in absolute ethanol, ultrasonically oscillate to dissolve them evenly, and then place them for 24 hours to obtain the coating solution;

[0025] 2) The industrial TA1 grade titanium plate was pre-degreased, sandblasted, etched with 20wt% boiling sulfuric acid for 40 min, and washed with water; then the coating solution obtained in step 1) was uniformly coated on the etched titanium substrate surface, and the coating amount Control the weight of iridium atoms per square centimeter on the titanium substrate to 0.4 mg, and then irradiate it with infrared light until it is solidified, then put it in a box-type resistance furnace at 500 ° C for 15 minutes, and then take it out of the furnace to cool;

[0026] 3) Repeat step 2) for 3 to 5 times, then anneal at 500°C for 60 minutes to obtain 12.5mol% Ir-doped modified Ti / SnO 2 electrode.

Embodiment 3

[0028] 1) Weigh chloroiridic acid and tin tetrachloride respectively according to the metal ion molar ratio of 1:3, dissolve them together in absolute ethanol, ultrasonically oscillate to dissolve them evenly, and then place them for 24 hours to obtain the coating solution;

[0029] 2) The industrial TA1 grade titanium plate was pre-degreased, sandblasted, etched with 20wt% boiling sulfuric acid for 40 min, and washed with water; then the coating solution obtained in step 1) was uniformly coated on the etched titanium substrate surface, and the coating amount Control the weight of iridium atoms per square centimeter on the titanium substrate to 0.4 mg, and then irradiate it with infrared light until it is solidified, then put it in a box-type resistance furnace at 500 ° C for 15 minutes, and then take it out of the furnace to cool;

[0030] 3) Repeat step 2) for 3 to 5 times, then anneal at 500°C for 60 minutes to obtain 25mol% Ir-doped modified Ti / SnO 2 electrode.

[0031] ...

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Abstract

The invention discloses an Ir-doped titanium-based tin dioxide electrode with a photoelectrocatalytic property. The doping amount of Ir is 5-25mol%. The Ir-doped titanium-based tin dioxide electrode is prepared by the following steps: mixing and dissolving chloro-iridic aicd and tin tetrachloride in a metal ion molar ratio of 1:3-1:19 to prepare a coating liquid; and performing coating for many times, curing, thermal oxidization, cooling and annealing to prepare the Ir-doped titanium-based in dioxide electrode. The obtained Ir-doped titanium-based tin dioxide electrode shows a relatively good treatment effect on organic waste water and can be used for treating non-biodegradable organic wastewater.

Description

technical field [0001] The invention belongs to the field of electrode materials, and in particular relates to the application of an Ir-doped titanium-based tin dioxide electrode with photoelectric catalytic performance in degrading organic wastewater. Background technique [0002] Wide band gap semiconductor materials have the characteristics of large band gap, high breakdown electric field strength, high saturation electron drift velocity, high thermal conductivity, small dielectric constant, strong radiation resistance and good chemical stability. SnO 2 The material is a wide bandgap n-type semiconductor material with a rutile structure, and the space group belongs to P42 / mnm. At normal temperature, its bandgap width Eg=3.6e V can obtain high-efficiency radiation by direct transition between bands. [0003] The oxygen evolution overpotential of titanium-based tin-based electrodes is high, and it is an ideal anode material in the electrochemical oxidation wastewater syst...

Claims

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Application Information

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IPC IPC(8): H01L41/047C02F1/461C02F1/72
CPCC02F1/46109C02F1/4672C02F2001/46133
Inventor 邵艳群张帅何建王艳鸿黄善锋陈志杰
Owner FUZHOU UNIVERSITY
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