Preparation of passivation tunneling layer material and application thereof in solar cell

A technology of solar cells and tunneling layers, which is applied in the manufacture of circuits, electrical components, and final products, and can solve problems affecting the potential of structural batteries

Inactive Publication Date: 2018-08-10
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, as a passivation tunneling layer, silicon oxide still has too large a band step with silicon, and the thickness needs to be less than 2nm, which is difficult to overcome, which affects the full potential of this structure battery.

Method used

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  • Preparation of passivation tunneling layer material and application thereof in solar cell

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preparation example Construction

[0073] The preparation method of the carrier passivation tunneling film may include the steps of: using magnetron sputtering (Sputter), plasma enhanced chemical vapor deposition (PECVD), thermal evaporation (Thermal Evaporator), electron beam evaporation (E-beamEvaporator ), low-pressure chemical vapor deposition (LPCVD) or atomic layer deposition (ALD) methods, deposit tantalum pentoxide (Ta 2 o 5 ), thereby forming the carrier passivation tunneling film.

[0074] The preparation method of the carrier passivation tunneling film may include the following steps:

[0075] (a) In the vacuum chamber containing the silicon wafer, the pressure of the vacuum chamber is lower than 10 -2 Torr, pass into the gas containing tantalum (Ta) precursor molecule; Wherein, pass through time is 0.5-5 second; Preferably, be 1 second;

[0076] (b) feed an inert gas; wherein, the feed time is 10-60 seconds; preferably, 20-35 seconds; the flow rate of the inert gas is 50-200 sccm; preferably, 80-...

Embodiment 1

[0122] Step (1): Using a p-type monocrystalline silicon wafer with a resistivity of 2.0 Ω cm as the substrate, deposit Ta on both sides of the silicon wafer by atomic layer deposition (ALD) 2 o 5 film. Specific method: put the silicon wafer cleaned by RCA standard process into the ALD cavity, pump the cavity pressure to 10 -2 Below Torr, while heating the chamber to 200°C. Using tantalum ethoxide and water as precursors, first pass tantalum ethoxide vapor for 1 second, then pass nitrogen gas with a flow rate of 100 sccm for 30 seconds, then pass water vapor for 1 second, and finally pass nitrogen gas with a flow rate of 100 sccm for 30 seconds , which is a cycle. After 60 cycles of treatment, 1.8±0.2nm Ta can be obtained on the surface of the silicon wafer 2 o 5 film.

[0123] Step (2): Using aluminum particles as the evaporation source, in the prepared Ta 2 o 5 An aluminum electrode is vapor-deposited on the surface of the film with a specific mask pattern, and the th...

Embodiment 2

[0130] Step (1): Using a p-type monocrystalline silicon wafer with a resistivity of 2.0 Ω cm as the substrate, deposit Ta on both sides of the silicon wafer by atomic layer deposition (ALD) 2 o 5 film. Concrete method is with embodiment 1 step (1)

[0131] Step (2): Subsequent deposition of Ta on both sides by PECVD method 2 o 5 A boron-doped amorphous silicon film is deposited on both sides of the film sample. The specific method is: deposit Ta on both sides 2 o 5 The sample of the thin film is transferred to the PECVD chamber, and the chamber pressure is pumped to 10 - 5 below Torr while heating the sample to 150°C. Pass into 10sccm high-purity silane (SiH 4 ) and 10 sccm hydrogen diluted diborane (3% B 2 h 6 ), a radio frequency power of 10W, a process pressure of 0.4Torr, and a time of 10min, a boron-doped amorphous silicon film of about 40nm can be obtained on the sample surface.

[0132] Step (3): The above prepared double-sided Ta 2 o 5 The samples of thin...

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Abstract

The invention relates to preparation of a passivation tunneling layer material and an application thereof in a solar cell. Specifically, the invention discloses an application of a carrier passivationtunneling film used for preparing a solar cell, wherein the film contains tantalum pentaoxide (Ta2O5). The invention further provides a carrier transport structure used for preparing a solar cell anda preparation method thereof. The carrier passivation tunneling film provided by the invention overcomes defects of silicon oxide serving as a passivation tunneling layer on the aspect of the application of a passivation contact heterojunction cell.

Description

technical field [0001] The invention belongs to the field of inorganic materials. Specifically, the invention relates to the preparation of a passivation tunneling layer material and its application in solar cells. Background technique [0002] In recent years, the tunneling oxygen passivation contact crystalline silicon solar cell (also known as TOPCon or POLO cell in English) has become a hot spot in the international photovoltaic field. The battery device for current collection, the device structure is as follows figure 1 shown. [0003] Compared with conventional crystalline silicon solar cells, the structure of tunneling oxygen passivated contact crystalline silicon solar cells mainly adds two characteristic functional layers, the silicon oxide passivation tunneling layer and the polysilicon carrier collection layer, to form electrons or holes Selective transport structure. Moreover, the two characteristic functional layers of the tunneling oxygen passivation contact...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/0216H01L31/18Y02P70/50
Inventor 廖明墩叶继春曾俞衡闫宝杰王丹高平奇童慧全成张志
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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