Ohm contact production method of semi-insulation SiC semiconductor device

A technology of ohmic contact and manufacturing method, which is applied in the field of microelectronics, can solve the problem of low specific contact resistance of semi-insulating SiC, achieve good matching, facilitate manufacturing, and reduce the effect of contact barrier

Inactive Publication Date: 2010-01-27
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for making ohmic contacts of semi-insulating SiC semiconductor devices, to solve the problem that semi-insulating SiC is not easy to form low specific contact resistance due to high contact barriers, and to improve the service life and output characteristics of semi-insulating SiC devices

Method used

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  • Ohm contact production method of semi-insulation SiC semiconductor device

Examples

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Embodiment 1

[0027] Embodiment 1, taking a semi-insulating 4H-SiC photoconductive switch as an example, describes in detail the specific process of making an ohmic contact of a semi-insulating 4H-SiC semiconductor device according to the present invention.

[0028] refer to figure 1 , the present invention makes the ohmic contact process on the semi-insulating 4H-SiC photoconductive switch as follows:

[0029] In step 1, pretreatment is performed on the semi-insulating 4H-SiC material used.

[0030] First, passivate the surface of the semi-insulating 4H-SiC substrate with molten KOH. The etching temperature and etching time are 210°C and 15s, respectively; then, the passivated wafer is sequentially treated with acetone, methanol, and deionized water. Clean the sample, and finally, use the RCA standard cleaning process to remove the oxide layer on the surface of the substrate.

[0031] Step 2, epitaxially growing a heavily doped layer.

[0032] The heavily doped GaN heavily doped layer i...

Embodiment 2

[0060] In Embodiment 2, a semi-insulating 3C-SiC photoconductive switch is taken as an example.

[0061] The steps of using the heavily doped layer to make its ohmic contact are the same as the scheme 1 of Example 1, the only difference is that in step 2, a p-type GaN heavily doped layer is used for the deep main compensation type semi-insulating 4H-SiC, and the doping dose is 2.875×10 19 , the optimal doping thickness is 71.88nm; for deep donor compensated semi-insulating SiC, an n-type GaN heavily doped layer is used, and the doping dose is 2.73×10 19 , the optimum thickness of doping is 71.88nm.

[0062] The steps of making the ohmic contact with the intermediate layer are basically the same as the scheme 2 of the embodiment 1, the only difference is that the optimal thickness of the epitaxial 3C-SiC:Ge in the step 2 is 180nm.

Embodiment 3

[0063] In Embodiment 3, a semi-insulating 6H-SiC photoconductive switch is taken as an example.

[0064] The steps of using the heavily doped layer to make its ohmic contact are the same as the scheme 1 of Example 1, the only difference is that in step 2, a p-type GaN heavily doped layer is used for the deep main compensation type semi-insulating 4H-SiC, and the doping dose is 3.75×10 19 , the optimal thickness of doping is 93.75nm; for deep donor compensated semi-insulating SiC, an n-type GaN heavily doped layer is used, and the doping dose is 3.56×10 19 , the optimum thickness of doping is 93.75nm.

[0065] The steps of making an ohmic contact with the intermediate layer are basically the same as the scheme 2 of the embodiment 1, the only difference is that the optimal thickness of the epitaxial 3C-SiC:Ge in the step 2 is 234nm.

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Abstract

The invention discloses a production method of an ohmic contact of a semi-insulated SiC semiconductor device, which is mainly used for solving the problem that the ohmic contact is greater than contact resistance. The process is as follows: a SiC substrate is carried out the pretreatment, a GaN heavily doped layer or a SiC: Ge transition layer is outward extended on the SiC substrate; an ohmic contact region is determined on the GaN heavily doped layer or the SiC: Ge transition layer, and the GaN heavily doped layer or the SiC: Ge transition layer region in the ohmic contact region is carried out the KOH etching, thus allowing the SiC substrate in a channel region to be a Si surface; a layer of SiN materials with high dielectric constant is deposited on the ohmic contact region and the Si surface of the channel region; the SiN materials on the ohmic contact region are removed by etching, a metal is deposited on the region and an electrode is led out. The production method has the advantages that the ohmic contact is lower than the contact resistance and a sheet resistance, the service life is long and the production method can be used for the production of the ohmic contact of the semi-insulated SiC semiconductor device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to the manufacture of semiconductor devices, in particular to a method for manufacturing ohmic contacts of semi-insulating SiC devices. Background technique [0002] As a third-generation semiconductor material, SiC material has considerable advantages over the first-generation semiconductor materials represented by Si and the second-generation semiconductor materials represented by GaAs. Due to its large forbidden band width, it can be used in Working at a higher temperature is conducive to the preparation of high-power devices, and the large carrier saturation drift speed and mobility provide a good foundation for the response speed of the device. At present, the development of SiC devices has become a research hotspot in the field of semiconductor device circuits. Ohmic contact is an important process in the preparation of SiC devices. In high-temperature and high-power ap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/60
Inventor 郭辉程萍张玉明张义门廖宇龙
Owner XIDIAN UNIV
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