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Plasma processing device and plasma processing method

A processing device and plasma technology, applied in the fields of plasma, decorative art, transportation and packaging, etc., can solve the problems of burning of the protective film and insufficient cooling gas for cooling the wafer, and achieve the effect of preventing burning

Active Publication Date: 2013-02-20
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, when the wafers accommodated in the storage holes of the tray go beyond the inner edge of the storage holes and are misaligned, the cooling gas for cooling the wafers cannot sufficiently spread to the lower surface of the wafers.
As a result, the so-called protective film may be burned due to insufficient cooling of the wafer and exposure to high-temperature plasma.

Method used

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  • Plasma processing device and plasma processing method
  • Plasma processing device and plasma processing method
  • Plasma processing device and plasma processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0061] in Figure 1 ~ Figure 4 Among them, the plasma processing apparatus 1 according to the first embodiment of the present invention performs plasma processing (for example, dry etching) on ​​the processing target, and includes a storage section 2, a transfer chamber (transport section) 3, a calibration chamber (calibration section) 4, and a processing chamber (Processing part) 5 and control device 6 ( figure 1 and image 3 ). here, image 3 Yes figure 2 A-A cross-sectional view of Figure 4 Yes figure 2 B-B section view of the arrow.

[0062] The plasma processing device 1 uses Figure 5A and Figure 5B The transportable pallet 7 as shown is capable of simultaneously processing a plurality of wafers W as processing objects. The tray 7 is a thin disc-shaped member formed of an electrically insulating material such as a ceramic material. The tray 7 is provided with a plurality of (here, seven) circular receiving holes 7a that are provided to penetrate through the thickness ...

Embodiment approach 2

[0126] Such as Figure 17 and Figure 18 As shown, the plasma processing apparatus of the second embodiment has a structure in which one height detection sensor 44 is attached to the moving mechanism 70 provided on the upper surface of the ceiling portion 4b of the calibration chamber 4. The height detection sensor 44 can be linearly moved in the horizontal inner direction above the rotary table 41 by the moving mechanism 70. The plasma processing apparatus of the second embodiment is different from the plasma processing apparatus 1 of the first embodiment in that there is one height detection sensor 44, and the other parts are the same as the plasma processing apparatus 1 of the first embodiment.

[0127] The moving mechanism 70 is provided with a guide portion 71 which is provided in the top plate portion 4b of the calibration chamber 4 in a direction extending along the inner side of the horizontal plane; a ball screw 72 which is provided to extend in parallel with the guide po...

Embodiment approach 3

[0130] Figure 19 The illustrated plasma processing apparatus of Embodiment 3 is different from the plasma processing apparatuses of Embodiments 1 and 2 in that there are three height detection sensors. Specifically, on the upper surface of the top plate portion 4b of the calibration chamber 4, three height detection sensors, namely, a first height detection sensor 44A, a second height detection sensor 44B, and a Three height detection sensor 44C.

[0131] Such as Figure 19 As shown, the first height detection sensor 44A faces the imaginary circle S1 of the first embodiment (refer to Picture 20 ) Is irradiated with the inspection light L2, and three height detection target points P1, P2, P3 on the surface of the wafer W (passed by the rotation of the tray 7) located on the imaginary circle S1 are located near the outer edge. ( Picture 20 ) Height to be detected. In addition, the second height detection sensor 44B irradiates the inspection light L2 to a point on the virtual ci...

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Abstract

A plasma processing device comprises a stock unit (2), a processing unit (5), and an alignment chamber (4). The stock unit (2) supplies and collects a tray (7) that is capable of being conveyed, whereupon wafers (W) are housed within each of a plurality of housing holes (7a). In the processing chamber (5), plasma processing is executed on the wafers (W) that are housed in the tray (7) that is supplied from the stock unit (2). The alignment chamber (4) further comprises a rotating table (41), whereupon the tray (7) is loaded prior to the plasma processing, and the positioning of the wafers (W) is carried out upon the rotating table (41). A housing status determination unit (6b) of a control unit (6) uses heights detected with height detection sensors (44A-44D) to determine whether the wafers (W) have incurred position misalignment with regard to the housing holes (7a) of the tray (7).

Description

Technical field [0001] The present invention relates to plasma processing equipment such as dry etching equipment and CVD equipment. Background technique [0002] In the plasma processing apparatus, a support table called a susceptor installed in a chamber supports a wafer as a processing target. Next, a high-frequency voltage is applied to the inside and outside of the closed chamber and a gas for plasma generation is supplied, thereby generating plasma in the chamber. Plasma processing such as dry etching is performed on the wafer by exposing the wafer to plasma. [0003] Such a plasma processing apparatus uses a tray capable of accommodating a plurality of wafers in order to collectively support a plurality of wafers on a support table (for example, Patent Document 1). The tray is provided with a plurality of receiving holes having a diameter slightly larger than that of the wafer. The wafer is accommodated in each accommodating hole. The pallet accommodating the wafers is t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/68H01L21/205H01L21/3065H01L21/677H05H1/46
CPCH01L21/67109B44C1/227H05H2001/4675H01L21/67742H01L21/68771H01J37/32779H01L21/6831H01L21/68764H01L21/67754H01L21/68707H05H1/46H01L21/681H01L21/68742Y10S438/973H05H1/466
Inventor 置田尚吾大西康博
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD