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Plasma processing device and plasma processing method

The technology of a processing device and a processing method is applied in the directions of plasma, decorative arts, transportation and packaging, etc., which can solve the problems such as the burning of the protective film and the inability of the cooling gas to cool the wafer to fully spread over the wafer, and achieve the effect of preventing burning.

Active Publication Date: 2015-05-27
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, when the wafers accommodated in the storage holes of the tray go beyond the inner edge of the storage holes and are misaligned, the cooling gas for cooling the wafers cannot sufficiently spread to the lower surface of the wafers.
As a result, the so-called protective film may be burned due to insufficient cooling of the wafer and exposure to high-temperature plasma.

Method used

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  • Plasma processing device and plasma processing method
  • Plasma processing device and plasma processing method
  • Plasma processing device and plasma processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0057] exist Figure 1 ~ Figure 4 Among them, the plasma processing apparatus 1 according to Embodiment 1 of the present invention performs plasma processing (such as dry etching) on ​​an object to be processed, and includes a storage unit 2, a transfer chamber (transfer unit) 3, a calibration chamber (calibration unit) 4, and a processing chamber. (processing unit) 5 and control device 6 ( figure 1 and image 3 ). here, image 3 yes figure 2 The A-A sectional view of the line of sight, Figure 4 yes figure 2 B-B sectional view of B-B.

[0058] The plasma processing device 1 uses Figure 5A and Figure 5B The transportable tray 7 as shown is such that a plurality of wafers W to be processed can be processed at the same time. The tray 7 is a thin disc-shaped member formed of an electrically insulating material such as a ceramic material. The tray 7 is provided with a plurality of (here, seven) circular housing holes 7 a penetrating in the thickness direction and hav...

Embodiment approach 2

[0122] Such as Figure 17 and Figure 18 As shown, the plasma processing apparatus according to Embodiment 2 has a structure in which one height detection sensor 44 is attached to the moving mechanism 70 provided on the upper surface of the ceiling portion 4 b of the calibration chamber 4 . The height detection sensor 44 is linearly movable in the horizontal plane inner direction above the rotary table 41 by the moving mechanism 70 . The plasma processing apparatus of the second embodiment is different from the plasma processing apparatus 1 of the first embodiment in that there is one height detection sensor 44 , but the other parts are the same as those of the plasma processing apparatus 1 of the first embodiment.

[0123] The moving mechanism 70 includes: a guide part 71 provided on the top plate part 4b of the calibration chamber 4 in a direction extending inward in the horizontal plane; a ball screw 72 provided so as to extend parallel to the guide part 71; a moving part ...

Embodiment approach 3

[0126] Figure 19The plasma processing apparatus of Embodiment 3 shown is different from the plasma processing apparatuses of Embodiments 1 and 2 in that there are three height detection sensors. Specifically, three height detection sensors, that is, a first height detection sensor 44A, a second height detection sensor 44B, and a first height detection sensor 44A, are arranged on the upper surface of the ceiling portion 4b of the calibration chamber 4 in a manner aligned on the straight line LL in Embodiment 1. Three height detection sensors 44C.

[0127] Such as Figure 19 As shown, the first height detection sensor 44A points toward the imaginary circle S1 of Embodiment 1 (refer to Figure 20 ) to irradiate the inspection light L2 to a point on the imaginary circle S1, and three height detection target points P1, P2, P3 on the surface of the wafer W (passed by the rotation of the tray 7) near the outer edge at a point on the virtual circle S1 ( Figure 20 ) to detect the...

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Abstract

A plasma processing apparatus includes a stock unit, a processing unit, and an alignment chamber. The stock unit supplies and collects a conveyable tray formed with a plurality of housing holes in each of which a wafer is housed. In the processing chamber, plasma processing is executed on the wafers housed in the tray supplied from the stock unit. The alignment chamber is provided with a rotating table on which the tray before being subjected to the plasma processing is set to perform positioning of the wafers on the rotating table. A housing state determination unit of a control device determines whether or not the wafer is misaligned with respect the housing hole of the tray based on a height detected by height detecting sensors.

Description

technical field [0001] The present invention relates to plasma processing devices such as dry etching devices and CVD devices. Background technique [0002] In a plasma processing apparatus, a wafer to be processed is supported on a support table called a susceptor installed in a chamber. Next, a high-frequency voltage is applied to and outside the closed chamber, and a gas for plasma generation is supplied to generate plasma in the chamber. Plasma processing such as dry etching is performed on the wafer by exposing the wafer to plasma. [0003] Such a plasma processing apparatus uses a tray capable of accommodating a plurality of wafers in order to collectively support a plurality of wafers on a support table (for example, Patent Document 1). The tray has a plurality of receiving holes having a diameter slightly larger than that of the wafer. A wafer is accommodated in each accommodation hole. After alignment, the tray containing the wafers is transported by the transpo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/68H01L21/205H01L21/3065H01L21/677H05H1/46
CPCH01L21/67109H01L21/67742H01L21/67754H01L21/681H01L21/6831H01L21/68707H01L21/68742H01L21/68764H01L21/68771H01J37/32779Y10S438/973H05H1/466B44C1/227
Inventor 置田尚吾大西康博
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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