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LED chip and method for manufacturing LED chip

A technology of LED chips and heat-conducting substrates, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of epitaxial luminous body slivers and differences in thermal expansion coefficients, and achieve the goals of improving thermal mismatch, prolonging service life, and improving slivers. Effect

Active Publication Date: 2016-01-13
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the huge difference in the thermal expansion coefficients of the epitaxial emitter and the heat-conducting substrate, the expansion and contraction process of the epitaxial emitter and the heat-conducting substrate bonded to the heat-conducting substrate are extremely mismatched, so the phenomenon of epitaxial emitter splitting is extremely prone to occur

Method used

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  • LED chip and method for manufacturing LED chip
  • LED chip and method for manufacturing LED chip
  • LED chip and method for manufacturing LED chip

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Embodiment Construction

[0025] Refer to figure 1 The LED chip 100 according to the first embodiment of the present invention includes an epitaxial light-emitting body 11, a thermally conductive buffer layer (not labeled), and a thermally conductive substrate 13.

[0026] The epitaxial light-emitting body 11 is generated from a sapphire or silicon carbide substrate (not shown) and forms an existing LED chip (not shown) with it. In order to improve the heat dissipation performance of the existing LED chip, the epitaxial light-emitting body 11 is peeled off from the sapphire or silicon carbide substrate for later use.

[0027] The thermally conductive substrate 13 is a substrate with better heat dissipation performance than sapphire and silicon carbide, such as metal or ceramic. In this embodiment, the thermally conductive substrate 13 has a flat plate shape. The thermally conductive buffer layer is disposed on one side of the thermally conductive substrate 13. In this embodiment, the thermally conductive b...

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PUM

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Abstract

The invention discloses an LED chip and a manufacture method thereof. The LED chip comprises an epitaxial illuminant, a heat conducting substrate and a heat conducting buffer layer, the heat conducting buffer layer is arranged on one side of the heat conducting substrate, the epitaxial illuminant is bonded to the heat conducting buffer layer, and the mean heat expansion coefficient of the heat conducting buffer layer is between that of the heat conducting substrate and that of the epitaxial illuminant. By the means, the problem of heat mismatch between the heat conducting substrate and the epitaxial illuminant caused by the overlarge difference of the heat expansion coefficients can be solved effectively. Therefore, the problem of LED chip cracking can be solved effectively, and yield is increased while the service life of the LED chip is prolonged.

Description

Technical field [0001] The invention relates to a semiconductor device, in particular to an LED chip and a method for manufacturing the LED chip. Background technique [0002] Because light-emitting diodes have the advantages of low power consumption, low heat generation, and long life; therefore, in the fields of electronic display and lighting, light-emitting diodes are gradually replacing traditional lighting fixtures with high energy consumption and short life. [0003] An existing light-emitting diode light source is mainly composed of a heat-conducting substrate, an LED chip, a solid crystal glue, a fluorescent powder, a packaging glue and the like. First, the LED chip is glued on the thermal conductive substrate with die-bonding glue, then the LED chip signal is led out by the lead wire, then the phosphor is mixed with the packaging glue, and finally the mixture of the phosphor and the packaging glue is poured into the thermal conductive substrate, and heated The most basic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/00H01L33/64
Inventor 柴广跃冯丹华刘文李倩珊徐健阚皞胡永恒张菲菲李耀东
Owner SHENZHEN UNIV
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