Preparation method and equipment for preparing alpha-Al2O3 single crystal through gamma-Al2O3

Abstract

The invention discloses a preparation method and equipment for preparing an alpha-Al2O3 single crystal through gamma-Al2O3. The equipment comprises a frame, wherein a raw material conveying device, a nozzle, a sintering furnace core and an alpha-Al2O3 crystallization column lifting tray are sequentially which is arranged on the frame from top to bottom, wherein the raw material conveying device comprises a raw material barrel for accommodating gamma-Al2O3, and an oxygen conveying pipe and a hydrogen conveying pipe which are respectively connected with the raw material barrel for accommodating gamma-Al2O3; the nozzle comprises an oxygen nozzle and a hydrogen nozzle which is sleeved on the oxygen nozzle; an inlet of the oxygen nozzle is connected with the gamma-Al2O3 raw material barrel and the oxygen conveying pipe; an inlet of the hydrogen nozzle is connected with the hydrogen conveying pipe; the nozzle stretches into a cavity of the furnace core of the sintering furnace; the alpha-Al2O3 crystallization column can be lifted through the alpha-Al2O3 crystallization column lifting tray, so that the alpha-Al2O3 crystallization column can go in and out of the cavity of the furnace core of the sintering furnace; the bottom of the raw material barrel for accommodating gamma-Al2O3 is provided with a filtering net; and the raw material barrel is provided with a device for allowing the filtering net to generate different vibrations so as to regulate the conveying speed of gamma-Al2O3. The alpha-Al2O3 single crystal prepared by the method and equipment has good color, and the size of the crystal can be adjusted.

Description

technical field [0001] The present invention relates to α-Al 2 o 3 The preparation of single crystal, especially related to a kind of γ-Al 2 o 3 Preparation of α-Al 2 o 3 Single crystal preparation method and equipment thereof. Background technique [0002] Sapphire is widely used in high-brightness LED substrate materials, precision instrument bearings, large-scale integrated circuit SOI and SOS substrate materials, special optical components, window materials for high-energy detection and high-power lasers, and high-voltage materials. [0003] At present, the growth methods that can grow sapphire crystal mainly include: heat exchange method, kyropoulos method, resistance heating temperature gradient method, crucible drop method. However, the heat exchange method uses helium as the cooling gas, which is expensive and cannot directly grow crystals in the C-axis direction; the Kyropoulos method has poor process repeatability and high energy consumption; the resistance h...

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Problems solved by technology

[0004] In addition, the equipment currently used to grow sapphire is mainly a sintering furnace. However, the sintering furnace in the prior art cannot effectively control the raw material γ-Al for making sapphire. 2 o 3 The concentration between oxygen and hydrogen, that is, it is difficult to control the concentration of oxygen, hydrogen and γ-Al 2 o 3 The mass ratio between powders, and because oxygen and hydrogen are gases, only need to install flow control valves on their delivery pipelines, the combustion ratio of hydrogen and oxygen can be well controlled, which shows that it is necessary to control the γ-Al 2 o 3 The key to the mass ratio between , oxygen and hydrogen is to control the γ-Al 2 o 3 powder quality

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