Polycrystalline silicon resistance structure and method for manufacturing corresponding semiconductor integrated device

Abstract

Disclosed are a polycrystalline silicon resistance structure and a method for manufacturing a corresponding semiconductor integrated device. The method for manufacturing the semiconductor integrated device includes forming control gate material layers on a first region and a second region; synchronously etching the control gate material layers of the first region and the second region; forming a control gate of a split gate type flash memory in the first region; forming second polycrystalline silicon resistors in the second region; and forming first polycrystalline silicon resistors in the second region while forming a word line of the split gate type flash memory. The polycrystalline silicon resistance structure and the method have the advantages that extra processes are omitted, a process period is shortened, and consumed raw materials for depositing polycrystalline silicon and production and process costs are saved.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a polysilicon resistance structure and a corresponding semiconductor integrated device forming method. Background technique [0002] As the feature size (CD, Critical Dimension) of semiconductor devices becomes smaller and smaller, the integration of semiconductor chips is getting higher and higher, and the number and types of devices that need to be formed per unit area are also increasing, so the semiconductor The requirements for craftsmanship are also getting higher and higher. How to rationally arrange the positions of various devices, and how to save semiconductor process steps and materials by using the common points of each device manufacturing has become a hot research topic. [0003] In the manufacture of semiconductor devices, polysilicon is a very commonly used conductive material, which can usually be used to make gate electrodes of MOS transistors, high resistance polysi...

AI Technical Summary

Problems solved by technology

However, the integration degree of the forming process is low, and there are many process steps

Images