Semiconductor etching device and semiconductor etching method

Abstract

The utility model provides a semiconductor etching device and a semiconductor etching method. The semiconductor etching device comprises a reaction cavity, an air supplying source, a plasma radio-frequency power source and a polarization radio-frequency power source, wherein a piece-bearing table is arranged in the reaction cavity and used for placing to-be-etched substrates, the air supplying source is used for introducing air into the reaction cavity, the plasma radio-frequency source is used for changing the air in the reaction cavity into plasma, and the polarization radio-frequency power source is used for forming bias voltage on the surface of each to-be-etched base piece. Radio-frequency signals of the plasma radio-frequency power source and / or the polarization radio-frequency power source are impulse signals, and impulse frequency and a duty ratio of the impulse signals are changed along with change of time. The semiconductor etching device can adjust density and the bias voltage of plasma in the reaction cavity in real time according to requirements to control exchange of the plasma in a through hole and a reaction rate in the through hole so that control of appearance of the side wall of the through hole can be benefited.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a semiconductor etching device and a semiconductor etching method. Background technique [0002] In the semiconductor process, the process of etching the semiconductor material generally includes a dry etching process or a wet etching process, wherein, since the dry etching process using plasma for etching can effectively control the size of the etching opening The size has become the most mainstream etching process at present. [0003] Existing processes usually use glow discharge, radio frequency signal, corona discharge, etc. to form plasma. Among them, when using radio frequency signals to form plasma, the density and energy of the formed plasma can be controlled by adjusting the processing gas composition, frequency of radio frequency power, coupling mode of radio frequency power, air pressure, temperature and other parameters, so as to optimize the plasma treatment effect . Th...

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Problems solved by technology

However, the pulse frequency and duty cycle of the pulsed radio frequency signal in the prior art are determi

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