A kind of preparation method of non-photosensitive polyimide passivation layer

Abstract

The invention discloses a production method of a non-photosensitive polyimide passivation layer. The method of the production method of a non-photosensitive polyimide passivation layer includes the following steps: (1) Spin coating and baking of a non-photosensitive polyimide can be carried out on a silicon slice which needs to be covered with a passivation layer. (2) The spin coating and baking of a photoresist can be carried out on the non-photosensitive polyimide. (3) A superficial layer exposure can be carried out through a mask template with a passivation layer pattern and then a latent image of the passivation layer pattern can be formed on the photoresist. (4)Using a silicon alkylation agent to have a silicon alkylate treatment for the photoresist and change the latent image with the passivation layer pattern into a silicon alkylation pattern. (5) The silicon alkylation pattern is a mask film layer and a dry etching is carried out on the non-photosensitive polyimide, thus forming the passivation layer pattern.(6)Using photoresist stripping liquid to remove the photoresist and the silicon alkylation pattern. (7) An imaging non-photosensitive polyimide can be solidified so as to gain a needed non-photosensitive polyimide passivation layer. The method of the production method of the non-photosensitive polyimide passivation layer solves the problems that metal aluminium wires on the top layer are corroded by developing liquid and poor morphology of the non-photosensitive polyimide and the like in traditional process.

Description

technical field [0001] The invention belongs to the manufacturing process of semiconductor integrated circuits, and relates to a method for manufacturing a passivation layer, in particular to a method for manufacturing a non-photosensitive polyimide passivation layer. Background technique [0002] Non-photosensitive polyimide (polyimide) materials have been widely used in the passivation layer process of semiconductor devices due to their good high temperature resistance, mechanical properties, electrical properties and chemical stability, in order to reduce various natural environments. And the damage caused by the working environment to the semiconductor device, thereby improving the reliability and stability of the device. [0003] The general traditional non-photosensitive polyimide passivation layer production process is as follows: figure 1 As shown, first spin-coat and bake non-photosensitive polyimide on the silicon wafer that needs to make a non-photosensitive poly...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for making a non-photosensitive polyimide passivation layer, so as to solve the problem of the corrosion of the top layer metal aluminum wire by the developer and the non-photosensitive polyimide passivation layer in the traditional non-photosensitive polyimide process. Problems such as poor morphology of imide

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