Preparation method for high conductivity organic (inorganic) /metal/ inorganic (organic) multilayered structure transparent conducting thin film
A high-conductivity, multi-layer structure technology, used in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve problems such as limiting the application of transparent conductive films, achieve high visible light transmittance, good bending resistance, The effect of low surface resistance
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[0039] The steps of the preparation method of the highly conductive organic (inorganic) / metal / inorganic (organic) multilayer structure transparent conductive film of the present invention are as follows:
[0040] Step 1), preparing the first dielectric layer 200 on the rigid or flexible planar substrate 100;
[0041] Step 2), preparing a metal layer 300 on the first dielectric layer 200;
[0042] Step 3), preparing a second dielectric layer 400 on the metal layer 300;
[0043] The material of the first dielectric layer 200 is any organic or inorganic semiconductor material, or a mixture of various organic or inorganic semiconductor materials; the material of the second dielectric layer 400 is any inorganic or organic semiconductor material, Or any mixture of various inorganic or organic semiconductor materials.
[0044] Specifically, the preparation method of the highly conductive organic (inorganic) / metal / inorganic (organic) multilayer transparent conductive film of the pre...
Embodiment 1
[0052] After cleaning and drying the planar substrate 100, prepare 30 nm thick PVK as the first dielectric layer 200, 12 nm thick Ag as the metal layer 300 and 30 nm thick WO 3 As the second dielectric layer 400, the final structure is PVK (30 nm) / Ag (12 nm) / WO 3 (30 nm) multilayer transparent conductive film. The planar substrate 100 is a plastic substrate; the first dielectric layer 200 is prepared by solution spin coating, the second dielectric layer 400 is prepared by thermal evaporation, and the metal layer 300 is prepared by electron beam evaporation. The prepared PVK / Ag / WO 3 After being bent 50,000 times, the multilayer structure transparent conductive film has no change in visible light transmittance, and its surface resistance has increased from 5 Ω / □ to 8 Ω / □, which still has excellent electrical conductivity.
Embodiment 2
[0054] After the planar substrate 100 was cleaned and dried, 10 nm thick WO 3 As the first dielectric layer 200, 12 nm thick Ag as the metal layer 300 and 40 nm thick PVK:OXD-7 as the second dielectric layer 400, the final structure is WO 3 (10 nm) / Ag(12 nm) / PVK:OXD-7 (40 nm) multilayer transparent conductive film. Wherein the mixing ratio of PVK:OXD-7 in the OXD-7 mixture is 50%; the plane substrate 100 is a plastic substrate; the first dielectric layer 200 is prepared by thermal evaporation, the second dielectric layer 400 is prepared by solution spin coating, and Layer 300 is prepared by electron beam evaporation.
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