Method for stripping graphene with ultrasonic assist

A technology of exfoliating graphene and ultrasonic waves, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems that the area of ​​graphene cannot be effectively controlled, the complexity of the process is increased, and the force applied to the manual tearing tape is uneven.

Inactive Publication Date: 2013-04-24
西安海辰兴新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a method for ultrasonically assisted exfoliation of graphene, which aims to solve the widely used micromechanical exfoliation method for obtaining small pieces of graphene, and the area of ​​the obtained graphene is often not more than 100 μm 2 , due to the uneven force applied to the manual t

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  • Method for stripping graphene with ultrasonic assist
  • Method for stripping graphene with ultrasonic assist

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Experimental program
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Effect test

Embodiment 1

[0046] The realization steps of the present invention are as follows:

[0047] Step 1. Fix highly oriented pyrolytic graphite (HOPG) between the upper and lower substrates with double-sided tape.

[0048] Step 2, put the fixed HOPG into the ultrasonic generator, immerse in deionized water, adjust the ultrasonic power to 0.1×10 5 J. Time 10min, temperature 10℃;

[0049] Step 3, start the ultrasonic generator for lateral vibration;

[0050] Step 4, separate the HOPG from the upper substrate, and fix it under the new upper substrate with double-sided tape;

[0051] Step 5, repeat the above process 5 times until graphene is obtained.

[0052] Step 6, use analytically pure acetone to remove residual tape components on the graphene surface.

Embodiment 2

[0054] The realization steps of the present invention are as follows:

[0055] Step 1. Fix highly oriented pyrolytic graphite (HOPG) between the upper and lower substrates with double-sided tape.

[0056] Step 2, put the fixed HOPG into the ultrasonic generator, immerse in deionized water, adjust the power of the ultrasonic wave to 1×10 5 J. Time 300min, temperature 30℃;

[0057] Step 3, start the ultrasonic generator for lateral vibration;

[0058] Step 4, separate the HOPG from the upper substrate, and fix it under the new upper substrate with double-sided tape;

[0059] Step 5, repeat the above process 8 times until graphene is obtained.

[0060] Step 6, use analytically pure acetone to remove residual tape components on the graphene surface.

Embodiment 3

[0062] The realization steps of the present invention are as follows:

[0063] Step 1. Fix highly oriented pyrolytic graphite (HOPG) between the upper and lower substrates with double-sided tape.

[0064] Step 2, put the fixed HOPG into the ultrasonic generator, immerse in deionized water, and adjust the ultrasonic power to 2×10 5 J. Time 50min, temperature 40℃;

[0065] Step 3, start the ultrasonic generator for lateral vibration;

[0066] Step 4, separate the HOPG from the upper substrate, and fix it under the new upper substrate with double-sided tape;

[0067] Step 5, repeat the above process 10 times until graphene is obtained.

[0068] Step 6, use analytically pure acetone to remove residual tape components on the graphene surface.

[0069] The present invention has the following advantages:

[0070] 1. The production efficiency of graphene is improved due to the ultrasonic-assisted exfoliation.

[0071] 2. The production quality of graphene is improved thanks to...

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Abstract

The invention belongs to the technical field of semiconductor material manufacture, and provides a method for stripping graphene with ultrasonic assist. The method for stripping the graphene with the ultrasonic assist comprises fixing highly oriented pyrolytic graphite (HOPG) between an upper substrate and a lower substrate through double sticky tapes, putting the fixed HOPG in an ultrasonic generator, soaking the HOPG in deionized water, and adjusting ultrasonic power to be in a range form 0.1J to 2*105J, time to be in a range form 1min to 50min and temperature to be in a range from 10DEG C to 40DEG C; starting the ultrasonic generator, and carrying lateral oscillation; separating the HOPG from the upper substrate, and fixing the HOPG below an upper substrate; repeating the above processes for 5-10 times until the graphene is obtained; and removing residue adhesive tape components on the surface of the graphene by using analytically pure acetone. The The method for stripping the graphene with the ultrasonic assist uses ultrasonic wave to destroy bonds between graphitic layers so as to strip the graphene, is good in homogeneity and high in efficiency, avoids influence of adhesive tape residue of a manual stripping method, and has good value of popularization and application.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a method for ultrasonically assisted exfoliation of graphene. Background technique [0002] Graphene material is a carbon-based two-dimensional crystal. It is the lightest and thinnest material known so far. The single layer is only atomically thick. It has extremely excellent physical and chemical properties. Estimated to be over 2×10 5 cm 2 V -1 the s -1 , which is hundreds of times that of silicon), can be made into ultra-high-speed electronic devices; utilize super strong mechanical properties (Young's modulus is about 10 3 GPa), can develop ultra-light and super-strength composite materials; use its extremely high specific surface area and excellent gas-sensing characteristics, can develop high-sensitivity gas-sensitive detectors; use its extremely high transparency and flexibility, can be used Prepare highly flexible transparent electrod...

Claims

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Application Information

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IPC IPC(8): H01L21/02
Inventor 柴正王东宁静韩砀闫景东张进成郝跃
Owner 西安海辰兴新材料科技有限公司
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