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Double-layer silicon nitride antireflection film for solar cell and preparation method thereof

A solar cell, silicon nitride reduction technology, applied in coatings, circuits, electrical components, etc., can solve the problems of difficult passivation of silicon wafers, low photoelectric conversion rate, etc.

Active Publication Date: 2013-04-24
GCL SYST INTEGRATION TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the problems of low photoelectric conversion rate and difficult passivation treatment of silicon wafers in the prior art, and proposes a double-layer silicon nitride anti-reflection film for solar cells, which is attached to the surface of silicon wafers, namely can solve the above problems

Method used

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  • Double-layer silicon nitride antireflection film for solar cell and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0023] (1) A P-type monocrystalline silicon wafer with a side length of 125 mm, a diagonal of 165 mm, and a thickness of 200 μm is heated in the PECVD equipment to Keep the working temperature stable, feed nitrogen and ammonia, adjust the working pressure and turn on the radio frequency power supply, the high frequency power of the power supply is 5000W;

[0024] (2) Activate the surface of the silicon wafer;

[0025] When performing steps 1 and 2, the flow rate of nitrogen gas is 1slm, the flow rate of ammonia gas is 53slm, and the time range is 50s;

[0026] (3) After the activation treatment, silane and ammonia gas are passed through, and the high-frequency power of the RF power supply is applied to discharge it, and the first film is deposited on the surface of the silicon wafer;

[0027] When performing the third step, the silane flow rate introduced is 1000sccm, the flow rate of ammonia gas is 2.5slm, and the deposition time is 50s;

[0028] (4) After the first film is...

Embodiment 2

[0034] (1) A P-type monocrystalline silicon wafer with a side length of 125 mm, a diagonal of 165 mm, and a thickness of 200 μm is heated in the PECVD equipment to Keep the working temperature stable, feed nitrogen and ammonia, adjust the working pressure and turn on the radio frequency power supply, the high frequency power of the power supply is 4100W;

[0035] (2) Activate the surface of the silicon wafer;

[0036] When performing steps 1 and 2, the flow rate of nitrogen gas is 3slm, the flow rate of ammonia gas is 3slm, and the time is 200s;

[0037] (3) After the activation treatment, silane and ammonia gas are passed through, and the high-frequency power of the radio frequency power supply is applied to discharge it, and the first film is deposited on the surface of the silicon wafer.

[0038] When performing the third step, the silane flow rate introduced is 1000sccm, the flow rate of ammonia gas is 2.5slm, and the deposition time is 200s;

[0039] (4) After the first...

Embodiment 3

[0045] (1) A P-type monocrystalline silicon wafer with a side length of 125 mm, a diagonal of 165 mm, and a thickness of 200 μm is heated in the PECVD equipment to Keep the working temperature stable, feed nitrogen and ammonia, adjust the working pressure and turn on the radio frequency power supply, the high frequency power of the power supply is 4200W;

[0046] (2) Activate the surface of the silicon wafer;

[0047] When executing steps 1 and 2, the flow rate of nitrogen gas is 2slm, the flow rate of ammonia gas is 4slm, and the time is 100s;

[0048] (3) After the activation treatment, silane and ammonia gas are passed through, and the high-frequency power of the RF power supply is applied to discharge it, and the first film is deposited on the surface of the silicon wafer;

[0049] When performing the third step, the silane flow rate introduced is 900sccm, the flow rate of ammonia gas is 3slm, and the deposition time is 120s;

[0050] (4) After the first film is formed, ...

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Abstract

The invention relates to a double-layer silicon nitride antireflection film for a solar cell. The double-layer silicon nitride antireflection film comprises a silicon wafer. A first film body is covered on the silicon wafer, a second film body is covered on the first film body, the first film body and the second film body are made of silicon nitride, and the refractive index of the firs film body is higher than that of the second film body. A preparation method of the double-layer silicon nitride antireflection film is that a cleaned silicon wafer is arranged in plasma enhanced chemical vapor deposition (PECVD) equipment to be heated to work temperature to remain stable, nitrogen and ammonia are filled into, work pressure is adjusted, and a radio frequency power supply is turned on, the surface of the silicon wafer is activated, silane and ammonia are filled into to discharge with high frequency power of the radio frequency power supply, the first film body is deposited on the surface of the silicon wafer, the flow of the silane and the ammonia is changed, and the second film body is deposited on the surface of the first film body. The double-layer silicon nitride antireflection film has the advantages of being simple and quick in process, passivating the surface of the solar cell and an inner suspension key, reducing sunlight reflection of the surface of the solar cell and greatly improving photoelectric conversion efficiency of the silicon wafer of the solar cell.

Description

technical field [0001] The invention relates to a solar battery silicon chip, in particular to a double-layer film structure pasted on the surface of the silicon chip, which mainly plays the role of passivating the surface of the battery chip and dangling bonds in the body and reducing the reflection of incident sunlight on the surface of the battery chip. Background technique [0002] In order to make better use of solar energy, improve the spectral response of the battery, and then improve the conversion efficiency of the battery, the conventional process is to deposit a layer of Si on the surface of the silicon wafer. 3 N 4 :H anti-reflection passivation film, which reduces the reflection of sunlight on the surface of the cell and maximizes the utilization of sunlight. However, due to the existence of a large number of dangling bonds in the silicon wafer and on the surface, the minority carrier recombination rate of the battery is high, which greatly reduces the open cir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18C23C16/34C23C16/52
CPCY02P70/50
Inventor 高华秦尤敏张闻斌闫丽李杏兵
Owner GCL SYST INTEGRATION TECH