Small-sized and quickly-turning Schmitt trigger circuit used for silicon on insulator technique

A Schmitt trigger, small-size technology, applied in the direction of electrical components, electric pulse generation, pulse generation, etc., can solve the problems of multi-chip area and slow speed, and achieve the effect of fast flipping speed and small size

Active Publication Date: 2013-04-24
GUANGZHOU HUIZHI MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since there are two transistors connected in series on the pull-up path and the pull-down path of this Schmitt trigger, its speed is slower and it takes up more chip area.

Method used

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  • Small-sized and quickly-turning Schmitt trigger circuit used for silicon on insulator technique
  • Small-sized and quickly-turning Schmitt trigger circuit used for silicon on insulator technique
  • Small-sized and quickly-turning Schmitt trigger circuit used for silicon on insulator technique

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Embodiment Construction

[0021] The embodiment of the present invention is illustrated below by specific examples, please refer to Figure 4 . Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. Various modifications or changes may be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0022] Figure 4 A specific implementation example of a Schmitt trigger circuit applying the present invention is given. The circuit includes two PMOS transistors 11 and 13, two NMOS transistors 10 and 12, and a PMOS / NMOS bulk control circuit composed of NMOS transistors 23 and 24, PMOS transistors 21 and 22, diodes 25 and 27, and resistor 26. The gate of the PMOS transistor 11 is connected to the input terminal, the sou...

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Abstract

The invention discloses a small-sized and quickly-turning Schmitt trigger circuit used for silicon on insulator technique. A p-channel metal oxide semiconductor (PMOS)/n-channel metal oxide semiconductor (NMOS) control circuit is adopted to change threshold voltage, input change from a high level to a low level and input change from the low level to the high level can have different turn thresholds, and therefore a Schmitt trigger function can be achieved. Through adoption of the PMOS/ NMOS control circuit, time for ascending and descending is shortened, the amount of transistors on a pull-up path and a pull-down path is decreased at the same time, and compared with a traditional structure, the circuit is fast in turning speed and small in size.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to a small-sized, fast flipping Schmitt trigger circuit for insulating silicon technology. Background technique [0002] Schmitt triggers are widely used in digital circuits and analog circuits, especially in anti-noise and waveform shaping, Schmitt triggers play an irreplaceable role. The Schmitt trigger exhibits double flipping threshold characteristics in its DC characteristics - there are different flipping thresholds for different flipping directions: when the input signal changes from low level to high level, the flipping threshold is V+; when the input When the signal changes from high level to low level, the flipping threshold is V-. When the input low-level signal of the Schmitt trigger is coupled with noise, as long as the superposition of the signal level and the noise level does not exceed V+, the output state of the Schmitt trigger will not change; the input high-l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/3565
CPCH03K3/3565
Inventor 李阳
Owner GUANGZHOU HUIZHI MICROELECTRONICS
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