2results about How to "Flip fast" patented technology

This utility model discloses a flipping fixture for CNC machining of round-head press-fit screws, including a flipping housing. The upper right side of the flipping housing has a screw discharge groove, and the lower right side of the flipping housing has a screw feed groove. It also includes a flipping mechanism. The flipping mechanism includes a turntable, flipping grooves, a first conveyor belt, and a second conveyor belt. The turntable is rotatably connected to the middle of the left inner wall of the flipping housing via a first rotating shaft. Flipping grooves are respectively provided along the outer edge of the right side of the turntable. The first conveyor belt is disposed inside the screw discharge groove. This utility model, through the synchronous rotation of the turntable and the feeding / discharging components, flips the round-head press-fit screws that sequentially enter the flipping grooves. After being flipped 180 degrees, the round-head press-fit screws automatically leave, achieving automatic continuous flipping of the round-head press-fit screws. This is more suitable for flipping large batches of small workpieces, improving the efficiency of CNC machining of round-head press-fit screws.

The application provides a voltage-regulated SOT-MRAM memory cell and SOT-MRAM memory, the SOT-MRAM memory cell comprising: a spin-orbit torque generation layer, a top electrode, and a magnetic tunnel junction between the spin-orbit torque generation layer and the top electrode, the magnetic tunnel junction comprising: a free layer on the spin-orbit torque generation layer, the free layer having a direction-variable perpendicular magnetization; a barrier layer on the free layer; a reference layer on the barrier layer, having a direction-fixed perpendicular magnetization; a spacer layer on the reference layer; a bias layer on the spacer layer, having a magnetization opposite to the magnetization direction of the reference layer, for generating a bias field to the free layer, wherein the saturation magnetization of the bias layer is higher than the saturation magnetization of the reference layer; and a regulation layer on the bias layer, for changing the magnetic anisotropy of the bias layer by using the VCMA effect when a voltage across the magnetic tunnel junction is applied between the top electrode and the spin-orbit torque generation layer.