Check patentability & draft patents in minutes with Patsnap Eureka AI!

Electrically erasable programmable read-only memory (EEPROM) modeling method and boundary scan test program loading method

A modeling method and memory technology, applied in the field of memory, can solve problems such as low production efficiency, increased process, and increased cost, and achieve the effects of reducing product maintenance costs, reducing workload, and reducing difficulty in writing

Inactive Publication Date: 2013-05-01
BEIJING AEROSPACE MEASUREMENT & CONTROL TECH
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, one more link is added in the production process, resulting in low production efficiency, and a corresponding process is added, and the cost is also increased.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrically erasable programmable read-only memory (EEPROM) modeling method and boundary scan test program loading method
  • Electrically erasable programmable read-only memory (EEPROM) modeling method and boundary scan test program loading method
  • Electrically erasable programmable read-only memory (EEPROM) modeling method and boundary scan test program loading method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058]In order to solve the problem in the prior art that when encountering EEPROM storage devices, designers need to write corresponding test programs, which cannot achieve the purpose of general testing, resulting in a large workload for designers and difficult maintenance. The present invention provides A modeling method and loading method of an EEPROM memory, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0059] figure 1 It is a flow chart of the EEPROM memory modeling method of the embodiment of the present invention, such as figure 1 As shown, the method includes the following steps:

[0060] Step 101, each attribute of EEPROM memory is defined respectively by the key word set in advance, completes the establishment of model file with text file;

[0061] Among them, each attribute of EEPROM memory includes: SPI type EEPROM signal line definition, EEPROM enable, read, write, erase, enable ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an electrically erasable programmable read-only memory (EEPROM) modeling method and a boundary scan test program loading method for an EEPROM. The EEPROM modeling method comprises the following steps of 101, respectively defining all attributes of the EEPROM by preset keywords, and building a model file in a text file form, and 102, adding a preset suffix to the model file, and saving the model file with the preset suffix so that EEPROM modeling is finished. The attributes of the EEPROM comprise an EEPROM control signal line definition, an EEPROM action timing sequence function and an EEPROM information definition. The EEPROM information comprises address wire bit wide, data line bit wide and maximum programming byte number. The EEPROM model obtained by the EEPROM modeling method has usability and reusability, is convenient for modification, reduces a product maintenance cost and reduces programming difficulty of boundary scan test program.

Description

technical field [0001] The invention belongs to the field of memory, in particular to a modeling method of EEPROM and a loading method of a boundary scan test program. Background technique [0002] In the prior art, the boundary-scan test software is software running on a computer, which is organically combined with a boundary-scan test controller to form a fully functional boundary-scan test system. The boundary scan test system completes tasks such as test vector generation, test vector loading, test response analysis, fault display and auxiliary functions. At the same time, the non-volatile memory can also be loaded with programming programs by using the boundary scan test system. [0003] At present, when loading EEPROM programs, the traditional method needs to first write the implementation program according to the test items that need to be completed, and then use specific tools to program and load the program according to the characteristics of the EEPROM and the cor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/04
Inventor 李洋杜影徐鹏程王石记
Owner BEIJING AEROSPACE MEASUREMENT & CONTROL TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com