Manufacturing method of image sensor
A technology of image sensor and manufacturing method, which is applied in the direction of radiation control devices, etc., to achieve the effect of improving performance and reducing surface defects
Active Publication Date: 2013-05-01
WUHAN XINXIN SEMICON MFG CO LTD
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[0002] In the manufacturing process of back-illuminated image sensors, it is necessary to thin the back of the wafer and use surface treatment to avoid surface defects to improve product performance. The treatment of the back surface of the device wafer is very critical to the quality of the image sensor. If There are surface defects, which will lead to dark current and white pixels, and the existing process uses steam oxide method for surface treatment. Although it has a certain effect, there are still large defects on the back of the wafer. It has a great impact on the subsequent process and device performance, which requires a lot of room for improvement in the surface treatment of the back of the wafer
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[0008] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0009] Such as figure 1 As shown, a method for manufacturing an image sensor, comprising step 101 device wafer flatness grinding, step 102 device wafer bonding, step 103 device wafer back thinning, step 104 device wafer back surface grinding, step 105 Deposition of a high dielectric layer on the surface of the device wafer, step 106 installation of color filters and microlenses, the surface treatment of the back surface of the device wafer adopts the radio frequency emitted by the radio frequency generator to excite the decoupling plasma oxide to generate plasma to the device crystal The circular back surface was subjected to defect treatment, and the selected RF power was 150 watts considering the capability of the...
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The invention relates to a manufacturing method of an image sensor. The manufacturing method comprises the following steps of: device wafer flatness grinding, device wafer bonding, device wafer back thinning, device wafer back surface grinding, sedimentting, color filter mounting and microlens mounting, wherein during the device wafer back surface treatment, radio-frequency drive emitted by a radio frequency generator is adopted to decouple a plasma oxide to generate plasma used for performing detect treatment on the back surface of a device wafer, and the radio-frequency power of the radio frequency generator is less than 200 watts; During the manufacturing process of a back-illumination imager sensor, radio frequency emitted by the radio frequency generator is utilized to the decoupled plasma oxide to generate the plasma used for performing defect treatment on the back surface of the device wafer, so that defects on the back surface of the device wafer are reduced, and the device performance is promoted.
Description
technical field [0001] The invention relates to the field of image sensor manufacturing, in particular to an image sensor manufacturing method. Background technique [0002] In the manufacturing process of back-illuminated image sensors, it is necessary to thin the back of the wafer and use surface treatment to avoid surface defects to improve product performance. The treatment of the back surface of the device wafer is very critical to the quality of the image sensor. If There are surface defects, which will lead to dark current and white pixels, and the existing process uses steam oxide method for surface treatment. Although it has a certain effect, there are still large defects on the back of the wafer. It has a great impact on the subsequent process and the performance of the device, which requires a lot of room for improvement in the surface treatment of the back of the wafer. Contents of the invention [0003] The technical problem to be solved by the present invent...
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IPC IPC(8): H01L27/146
Inventor 李平
Owner WUHAN XINXIN SEMICON MFG CO LTD