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Lithographic apparatus and method

A technology of lithography equipment and radiation beams, which is applied in the direction of micro-lithography exposure equipment, photomechanical equipment, printing equipment, etc., and can solve the problems of reducing the output of lithography equipment, expensive pattern forming devices, and reducing the efficiency of lithography equipment.

Active Publication Date: 2013-05-01
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contamination of the patterning device may degrade the imaging performance of the lithographic apparatus and in more severe cases may require replacement of the patterning device
Patterning devices can be expensive, so any reduction in the frequency with which patterning devices must be replaced is advantageous
Furthermore, patterning device replacement is a time-consuming process during which the operation of the lithographic apparatus may have to be stopped
Stopping the operation of the lithographic apparatus may reduce the output of the lithographic apparatus and therefore reduce the efficiency of the lithographic apparatus, which is undesirable

Method used

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  • Lithographic apparatus and method

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Embodiment Construction

[0040] figure 1A lithographic apparatus 100 comprising a source collector module SO according to one embodiment of the present invention is schematically shown. The apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g. EUV radiation); a support structure (e.g. a mask table) MT configured to support a patterning device (e.g. a mask or Reticle) MA, and is connected with the first positioning device PM that is configured to accurately position pattern forming device; Wafer) W, and is connected with the second positioning device PW that is configured to accurately position substrate; onto a target portion C of the substrate W (eg, including one or more dies).

[0041] The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof, to direct, shape, or control the radiation.

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Abstract

A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane (44) is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles (54) through the membrane. A particle trapping structure (52) is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles (58) from inside the chamber to outside the chamber.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Application 61 / 358,645, filed June 25, 2010, and US Provisional Application 61 / 362,981, filed July 9, 2010, both of which are hereby incorporated by reference in their entirety. technical field [0003] The present invention relates to a lithographic apparatus and method. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. A lithographic apparatus may be used, for example, in integrated circuit (IC) manufacturing processes. In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, transfer of the patte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F1/24G03F1/62G02B5/20G02B5/08
CPCB82Y10/00H01B1/04G02B27/0006G03F1/24G02B5/0891G03F7/70916H01B1/24G02B5/204B82Y40/00C01B31/04G21K1/062G02B5/0816G02B5/208G03B27/54G03F7/70958G03F1/62G03F7/70983G21K2201/061C01B32/20G02B5/08G03F7/20G03F7/702H01L21/027G03F1/64G03F7/70058
Inventor A·亚库宁V·班尼恩E·鲁普斯特拉H·范德斯库特L·史蒂文斯M·范卡朋
Owner ASML NETHERLANDS BV
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