Nitride semiconductor light-emitting element and manufacturing method therefor

Abstract

A nitride semiconductor light-emitting element of the present invention comprises a semiconductor lamination structure where a growth plane is m-plane and is formed from a GaN semiconductor. The semiconductor lamination structure comprises an n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer and an active layer located between the n-type semiconductor layer and the p-type semiconductor layer. The ratio (D) of the thickness of the active layer to the thickness of the n-type semiconductor layer is 1.8*10-4<=D<=14.1*10-4. The area (S) of the p-side electrode is 1*102[mu]m2<=S<=9*104[mu]m2. The maximum current density from which external quantum efficiency gives 88% of the maximum value is 2A / mm2 or more.

Description

technical field [0001] The present invention relates to a nitride-based semiconductor light-emitting element and a manufacturing method thereof. Background technique [0002] Nitride semiconductors containing nitrogen (N), a group VA element, are promising as materials for short-wavelength light-emitting devices due to their large band-gap. Among them, research on gallium nitride-based compound semiconductors (GaN-based semiconductors) is being actively carried out, and semiconductor lasers made of blue light-emitting diodes (LEDs), green LEDs, and GaN-based semiconductors are also being put into practical use (see, for example, patent documents 1, 2). GaN-based semiconductors have a wurtzite crystal structure. figure 1 A unit cell of GaN is schematically represented. in Al x Ga y In z In N (0≤x, y, z≤1, x+y+z=1) semiconductor crystals, figure 1 A part of Ga may be substituted with Al and / or In. [0003] figure 2 Indicates four basic vectors a1, a2, a3, and c gener...

AI Technical Summary

Problems solved by technology

In the case of LEDs, it causes an increase in power consumption or a decrease in luminous efficiency

Images