A kind of single crystal silicon chip pre-cleaning liquid and cleaning method thereof

Abstract

The invention relates to a single crystal silicon chip pre-cleaning solution and a cleaning method thereof. It is characterized in that it consists of the following components: the pre-cleaning liquid is composed of hydrogen peroxide, sodium hydroxide or potassium hydroxide and water. It is characterized in that it consists of the following components: hydrogen peroxide, sodium hydroxide or potassium hydroxide, and water. A cleaning method using a single crystal silicon wafer pre-cleaning solution according to claim 1, characterized in that: putting the silicon wafer inserted into the flower basket into the uniformly mixed single crystal silicon wafer pre-cleaning solution at a temperature of 55 At ~80°C, use ultrasonic cleaning for 60-600 seconds. After ultrasonic cleaning, rinse with deionized water for 1 minute at 60°C. After rinsing with deionized water, take out the silicon wafer and dry it. The invention has the advantages that after using the hydrogen peroxide process, the concentration of alkali is reduced, the amount of hydrogen generated is small, and no bubble marks will be produced on the surface of the silicon wafer, and there will be no drifting and no obvious boundaries. Since the concentration of the alkali is reduced, the amount of thinning is also effectively reduced, which is beneficial to reduce the fragmentation rate of the battery sheet in the subsequent process.

Description

technical field

[0001] The invention relates to a single crystal silicon chip pre-cleaning solution and a cleaning method thereof. Background technique

[0002] Solar cells use the interaction of sunlight and materials to directly generate electricity, without consuming fuel and water, and do not release any gas including carbon dioxide during use. It is a renewable energy source that does not pollute the environment. It is of great significance to improve the ecological environment and alleviate the harmful effects of greenhouse gases. Therefore, solar cells are expected to become an important new energy source in the 21st century.

[0003] The cell manufacturing process is mainly pre-cleaning→texturing→diffusion→etching→phosphorous silicon glass→coating with anti-reflection film→printing→sintering→testing.

[0004] After the solar silicon wafer is cut by wire cutting machine, its surface has been seriously polluted. To meet the industrial application standard of solar po...

Examples

Embodiment 1

[0021] Take 4.25 kg of hydrogen peroxide (concentration 30%), 0.24 kg of sodium hydroxide, add 95.51 kg of water to make 100 kg of cleaning solution, mix well, turn on the circulation and bubbling switch of the texturing machine, and turn off the bubbling after 5 minutes. Put the silicon wafers inserted into the flower basket into the pre-cleaning solution for single crystal silicon wafers mixed uniformly, at a temperature of 55°C, use ultrasonic cleaning for 60 seconds, after ultrasonic cleaning, rinse with deionized water for 1 minute at 60°C Finally, the silicon wafers were removed and dried after rinsing with deionized water.

Embodiment 2

[0023] Take 3 kg of hydrogen peroxide (concentration 30%), 0.2 kg of sodium hydroxide, add 96.8 kg of water to make 100 kg of cleaning solution, mix well, turn on the cycle and bubbling switch of the texturing machine, and turn off the bubbling after 3 minutes. Put the silicon wafers inserted into the flower basket into the pre-cleaning solution for single crystal silicon wafers mixed uniformly, at a temperature of 65°C, use ultrasonic cleaning for 300 seconds, after ultrasonic cleaning, rinse with deionized water for 1 minute at 60°C Finally, the silicon wafers were removed and dried after rinsing with deionized water.

Embodiment 3

[0025] Take 7 kg of hydrogen peroxide (concentration 30%), 1 kg of sodium hydroxide, add 92 kg of water to make 100 kg of cleaning solution, mix well, turn on the cycle and bubbling switch of the texturing machine, and turn off the bubbling after 4 minutes. Put the silicon wafers inserted into the flower basket into the pre-cleaning solution for single crystal silicon wafers mixed uniformly, at a temperature of 80°C, use ultrasonic cleaning for 600 seconds, after ultrasonic cleaning, rinse with deionized water for 1 minute at 60°C Finally, the silicon wafers were removed and dried after rinsing with deionized water.

technical field

[0001] The invention relates to a single crystal silicon chip pre-cleaning solution and a cleaning method thereof. Background technique

[0002] Solar cells use the interaction of sunlight and materials to directly generate electricity, without consuming fuel and water, and do not release any gas including carbon dioxide during use. It is a renewable energy source that does not pollute the environment. It is of great significance to improve the ecological environment and alleviate the harmful effects of greenhouse gases. Therefore, solar cells are expected to become an important new energy source in the 21st century.

[0003] The cell manufacturing process is mainly pre-cleaning→texturing→diffusion→etching→phosphorous silicon glass→coating with anti-reflection film→printing→sintering→testing.

[0004] After the solar silicon wafer is cut by wire cutting machine, its surface has been seriously polluted. To meet the industrial application standard of solar po...

Examples

Embodiment 1

[0021] Take 4.25 kg of hydrogen peroxide (concentration 30%), 0.24 kg of sodium hydroxide, add 95.51 kg of water to make 100 kg of cleaning solution, mix well, turn on the circulation and bubbling switch of the texturing machine, and turn off the bubbling after 5 minutes. Put the silicon wafers inserted into the flower basket into the pre-cleaning solution for single crystal silicon wafers mixed uniformly, at a temperature of 55°C, use ultrasonic cleaning for 60 seconds, after ultrasonic cleaning, rinse with deionized water for 1 minute at 60°C Finally, the silicon wafers were removed and dried after rinsing with deionized water.

Embodiment 2

[0023] Take 3 kg of hydrogen peroxide (concentration 30%), 0.2 kg of sodium hydroxide, add 96.8 kg of water to make 100 kg of cleaning solution, mix well, turn on the cycle and bubbling switch of the texturing machine, and turn off the bubbling after 3 minutes. Put the silicon wafers inserted into the flower basket into the pre-cleaning solution for single crystal silicon wafers mixed uniformly, at a temperature of 65°C, use ultrasonic cleaning for 300 seconds, after ultrasonic cleaning, rinse with deionized water for 1 minute at 60°C Finally, the silicon wafers were removed and dried after rinsing with deionized water.

Embodiment 3

[0025] Take 7 kg of hydrogen peroxide (concentration 30%), 1 kg of sodium hydroxide, add 92 kg of water to make 100 kg of cleaning solution, mix well, turn on the cycle and bubbling switch of the texturing machine, and turn off the bubbling after 4 minutes. Put the silicon wafers inserted into the flower basket into the pre-cleaning solution for single crystal silicon wafers mixed uniformly, at a temperature of 80°C, use ultrasonic cleaning for 600 seconds, after ultrasonic cleaning, rinse with deionized water for 1 minute at 60°C Finally, the silicon wafers were removed and dried after rinsing with deionized water.