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Backside illumination complementary metal-oxide-semiconductor (CMOS) image sensor and manufacturing method thereof

An image sensor, back-illuminated technology, applied in radiation control devices and other directions, can solve the problems of low reliability and yield of back-illuminated CMOS image sensors, film peeling, etc.

Active Publication Date: 2013-05-08
OMNIVISION TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a back-illuminated CMOS image sensor and its manufacturing method, to solve the problem that the existing back-illuminated CMOS image sensor is prone to film peeling, which leads to the reliability and good performance of the back-illuminated CMOS image sensor. low rate problem

Method used

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  • Backside illumination complementary metal-oxide-semiconductor (CMOS) image sensor and manufacturing method thereof
  • Backside illumination complementary metal-oxide-semiconductor (CMOS) image sensor and manufacturing method thereof
  • Backside illumination complementary metal-oxide-semiconductor (CMOS) image sensor and manufacturing method thereof

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Embodiment 1

[0035] Please refer to image 3 , which is a schematic diagram of the film stack of the back-illuminated CMOS image sensor according to Embodiment 1 of the present invention. Such as image 3 As shown, the back-illuminated CMOS image sensor 3 includes: a wafer 30; a vapor oxide layer 31 formed on the wafer; a thermal expansion buffer layer 32 formed on the vapor oxide layer; A high-K dielectric layer 33 on the buffer layer; wherein, the thermal expansion coefficient of the thermal expansion buffer layer 32 is between the thermal expansion coefficient of the wafer 30 and the thermal expansion coefficient of the high-K dielectric layer 33 .

[0036]Preferably, the thermal expansion coefficient of the thermal expansion buffer layer 32 is 2.5-5.8, further, the thermal expansion coefficient of the thermal expansion buffer layer 32 is 3.0-5.2, for example, the thermal expansion coefficient of the thermal expansion buffer layer 32 is 3.2, 3.4, 3.6 , 3.8, 4.0, 4.2, 4.4, 4.6, 4.8, or...

Embodiment 2

[0048] Please refer to Figure 4 , which is a schematic diagram of the film stack of the back-illuminated CMOS image sensor according to the second embodiment of the present invention. Such as Figure 4 As shown, the back-illuminated CMOS image sensor 4 includes: a wafer 40; a vapor oxide layer 41 formed on the wafer; a thermal expansion buffer layer 42 formed on the vapor oxide layer; The high-K dielectric layer 43 on the buffer layer; formed on the high-K dielectric layer; wherein, the thermal expansion coefficient of the thermal expansion buffer layer 42 is between the thermal expansion coefficient of the wafer 40 and the thermal expansion coefficient of the high-K dielectric layer 43 .

[0049] In this embodiment, the thermal expansion buffer layer 42 includes two thermal expansion buffer sublayers, specifically, a first thermal expansion buffer sublayer 420 and a second thermal expansion buffer sublayer 421, wherein the first layer thermal expansion The buffer sublayer ...

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Abstract

The invention provides a backside illuminated type complementary metal-oxide-semiconductor (CMOS) image sensor and a manufacturing method of the backside illuminated type CMOS image sensor, wherein the backside illuminated type CMOS image sensor includes a wafer, a vapor oxidation layer formed on wafer, a thermal expansion buffering layer formed on the vapor oxidation layer and a high K dielectric layer formed on the thermal expansion buffering layer. The thermal expansion coefficient of the thermal expansion buffering layer is between the thermal expansion coefficient of the wafer and the thermal expansion coefficient of the high K dielectric layer. In the backside illuminated type CMOS image sensor and the manufacturing method of the backside illuminated type CMOS image sensor, the thermal expansion buffering layer is formed between the wafer and the high K dielectric layer, and the thermal expansion coefficient of the thermal expansion buffering layer is between the thermal expansion coefficient of the wafer and the thermal expansion coefficient of the high K dielectric layer, so that thermal expansion difference between membrane layers can be reduced through the thermal expansion buffering layer, and accordingly the membrane stripping phenomenon cannot happen, and the reliability and yield of the backside illuminated CMOS image sensor are improved.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a back-illuminated CMOS image sensor and a manufacturing method thereof. Background technique [0002] The image sensor is developed on the basis of photoelectric technology. The so-called image sensor is a sensor that can sense optical image information and convert it into a usable output signal. Image sensors can improve the visual range of the human eye, enabling people to see the microcosm and macrocosm that cannot be seen by the naked eye, see what happens in places that people cannot reach temporarily, and see various physical and chemical changes beyond the visual range of the naked eye. Life, physiology, the occurrence and development of disease, and so on. It can be seen that image sensors play a very important role in people's culture, sports, production, life and scientific research. It can be said that modern human activities can no longer be separated from im...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 费孝爱洪齐元
Owner OMNIVISION TECH (SHANGHAI) CO LTD