Efficient groove type insulated gate bipolar transistor IGBT

Abstract

Provided is an efficient groove type insulated gate bipolar transistor IGBT. The efficient groove type IGBT belongs to the technical field of semiconductor device manufacturing, and includes a main body P + Substrate (1), a first epitaxial buffer layer (2) arranged above the main body P+ Substrate (1), a second epitaxial drift layer (3) is arranged above the first epitaxial buffer layer (2), a P-type region P-body (4), a polycrystalline silicon (7) and a groove (6) arranged on periphery of the polycrystalline silicon. The efficient groove type IGBT is characterized in that a third epitaxial layer (5) including an N layer and the P-type region P-body (4) is added on the second epitaxial drift layer (3). Compared with the prior art, the efficient groove type IGBT has the advantages of effectively reducing the resistance of the drift region (Driftregion), reducing saturation voltage VCEsat, and increasing positive electricity efficiency by 10%-30%.

Description

technical field

[0001] A high-efficiency trench type insulated gate bipolar transistor IGBT belongs to the technical field of semiconductor device manufacturing. Background technique

[0002] The epitaxial layer of the traditional N-type trench IGBT has two layers such as figure 2 As shown, the first epitaxial buffer layer is a buffer layer (Buffer Layer), which is relatively densely doped, preventing the expansion of the depletion region to the heavily doped P-type substrate P + Substrate. The second epitaxial drift layer is a drift region (Drift region) with low doping concentration, and its main function is to support reverse high voltage. Therefore, in the planar IGBT process, the resistance of the RJ part of the channel is relatively high, and the overall saturation voltage VCE of the IGBT when the current is turned on sat Higher, so the efficiency of conduction is lower. Contents of the invention

[0003] The technical problem to be solved by the present inventio...

Examples

Embodiment 1

[0020] Example 1 trench 6 penetrates N + and P-type region P-body 4 in the N-layer structure

[0021] This high-efficiency trench insulated gate bipolar transistor IGBT consists of a main body P+Substrate 1, a first epitaxial buffer layer 2, a second epitaxial drift layer 3, an N layer, a P-type region P-body 4, and a third Layer epitaxial layer 5, trench 6, polysilicon 7, borophosphosilicate glass BPSG 8 and aluminum layer AL 9. From bottom to top: the bottom layer is the main body P+Substrate 1, the first layer of epitaxial buffer layer 2 above the main body P+Substrate 1, the second layer of epitaxial drift layer 3 and N above the first layer of epitaxial buffer layer 2 layer, P-type region P-body 4, third epitaxial layer 5, trench 6, polysilicon 7, borophosphosilicate glass BPSG 8 and aluminum layer AL 9. The main body P+Substrate1 is a heavily doped P-type substrate, and the groove 6 outside the polysilicon 7 only penetrates the N + And the P-body 4 of the P-type regio...

Embodiment 2

[0025] Embodiment 2 trench 6 is a through N + , P-type region P-body 4 and N-layer structure

[0026] The difference between this high-efficiency trench type insulated gate bipolar transistor IGBT and Embodiment 1 is that the trench 6 is a punch-through N + , P-type region P-body 4 and N-layer structure. All the other are the same as in Example 1. No longer.

[0027] The three-layer epitaxial layer of the present invention can also be applied to similar structures of other high-voltage devices.

technical field

[0001] A high-efficiency trench type insulated gate bipolar transistor IGBT belongs to the technical field of semiconductor device manufacturing. Background technique

[0002] The epitaxial layer of the traditional N-type trench IGBT has two layers such as figure 2 As shown, the first epitaxial buffer layer is a buffer layer (Buffer Layer), which is relatively densely doped, preventing the expansion of the depletion region to the heavily doped P-type substrate P + Substrate. The second epitaxial drift layer is a drift region (Drift region) with low doping concentration, and its main function is to support reverse high voltage. Therefore, in the planar IGBT process, the resistance of the RJ part of the channel is relatively high, and the overall saturation voltage VCE of the IGBT when the current is turned on sat Higher, so the efficiency of conduction is lower. Contents of the invention

[0003] The technical problem to be solved by the present inventio...

Examples

Embodiment 1

[0020] Example 1 trench 6 penetrates N + and P-type region P-body 4 in the N-layer structure

[0021] This high-efficiency trench insulated gate bipolar transistor IGBT consists of a main body P+Substrate 1, a first epitaxial buffer layer 2, a second epitaxial drift layer 3, an N layer, a P-type region P-body 4, and a third Layer epitaxial layer 5, trench 6, polysilicon 7, borophosphosilicate glass BPSG 8 and aluminum layer AL 9. From bottom to top: the bottom layer is the main body P+Substrate 1, the first layer of epitaxial buffer layer 2 above the main body P+Substrate 1, the second layer of epitaxial drift layer 3 and N above the first layer of epitaxial buffer layer 2 layer, P-type region P-body 4, third epitaxial layer 5, trench 6, polysilicon 7, borophosphosilicate glass BPSG 8 and aluminum layer AL 9. The main body P+Substrate1 is a heavily doped P-type substrate, and the groove 6 outside the polysilicon 7 only penetrates the N + And the P-body 4 of the P-type regio...

Embodiment 2

[0025] Embodiment 2 trench 6 is a through N + , P-type region P-body 4 and N-layer structure

[0026] The difference between this high-efficiency trench type insulated gate bipolar transistor IGBT and Embodiment 1 is that the trench 6 is a punch-through N + , P-type region P-body 4 and N-layer structure. All the other are the same as in Example 1. No longer.

[0027] The three-layer epitaxial layer of the present invention can also be applied to similar structures of other high-voltage devices.

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