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High Efficiency Trench Insulated Gate Bipolar Transistor igbt

A bipolar transistor and trench technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problems of high resistance and low efficiency, and achieve the effect of reducing saturation voltage and increasing efficiency.

Active Publication Date: 2016-01-06
淄博美林电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is: to overcome the deficiencies of the prior art, and to provide a high-efficiency trench insulated gate bipolar transistor IGBT that can effectively solve the problems of high resistance and low efficiency in the forward conduction of the prior art

Method used

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  • High Efficiency Trench Insulated Gate Bipolar Transistor igbt
  • High Efficiency Trench Insulated Gate Bipolar Transistor igbt
  • High Efficiency Trench Insulated Gate Bipolar Transistor igbt

Examples

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Effect test

Embodiment 1

[0020] Embodiment 1 trench 6 through N + and P-type region P-body4 in the N-layer structure

[0021] The high-efficiency trench insulated gate bipolar transistor IGBT consists of a main body P+Substrate1, a first layer of epitaxial buffer layer 2, a second layer of epitaxial drift layer 3, an N layer, a P-type region P-body4, and a third layer of epitaxial Layer 5, trench 6, polysilicon 7, borophosphosilicate glass BPSG8 and aluminum layer AL9. From bottom to top: the lowermost layer is the main body P+Substrate1, the first layer of epitaxial buffer layer 2 above the main body P+Substrate1, the second layer of epitaxial drift layer 3 above the first layer of epitaxial buffer layer 2, N layer, P-type region P-body4, third epitaxial layer 5, trench 6, polysilicon 7, borophosphosilicate glass BPSG8 and aluminum layer AL9. The main body P+Substrate1 is a heavily doped P-type substrate, and the groove 6 outside the polysilicon 7 only penetrates the N + And the P-type region P-bo...

Embodiment 2

[0025] Embodiment 2 trench 6 is through N + , P-type region P-body4 and N-layer structure

[0026] The difference between this high-efficiency trench type insulated gate bipolar transistor IGBT and Embodiment 1 is that the trench 6 is a punch-through N + , P-type region P-body4 and N-layer structure. All the other are the same as in Example 1. No longer.

[0027] The three-layer epitaxial layer of the present invention can also be applied to similar structures of other high-voltage devices.

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Abstract

Provided is an efficient groove type insulated gate bipolar transistor IGBT. The efficient groove type IGBT belongs to the technical field of semiconductor device manufacturing, and includes a main body P + Substrate (1), a first epitaxial buffer layer (2) arranged above the main body P+ Substrate (1), a second epitaxial drift layer (3) is arranged above the first epitaxial buffer layer (2), a P-type region P-body (4), a polycrystalline silicon (7) and a groove (6) arranged on periphery of the polycrystalline silicon. The efficient groove type IGBT is characterized in that a third epitaxial layer (5) including an N layer and the P-type region P-body (4) is added on the second epitaxial drift layer (3). Compared with the prior art, the efficient groove type IGBT has the advantages of effectively reducing the resistance of the drift region (Driftregion), reducing saturation voltage VCEsat, and increasing positive electricity efficiency by 10%-30%.

Description

technical field [0001] A high-efficiency trench type insulated gate bipolar transistor IGBT belongs to the technical field of semiconductor device manufacturing. Background technique [0002] The epitaxial layer of the traditional N-type trench IGBT has two layers such as figure 2 As shown, the first epitaxial buffer layer is a buffer layer (BufferLayer), which is relatively densely doped to prevent the expansion of the reverse high-voltage depletion region to the heavily doped P-type substrate P + Substrate. The second epitaxial drift layer is a drift region (Driftregion) with low doping concentration, and its main function is to support reverse high voltage. Therefore, in the planar IGBT process, the resistance of the RJ part of the channel is relatively high, and the overall saturation voltage VCE of the IGBT when the current is turned on sat Higher, so the efficiency of conduction is lower. Contents of the invention [0003] The technical problem to be solved by th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/10
Inventor 关仕汉吕新立
Owner 淄博美林电子有限公司
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