Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device

Abstract

The invention discloses a planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device comprising a vacuum cavity, a microwave resonance cavity, a microwave antenna, microwave waveguides and microwave generators, wherein the microwave resonance cavity is arranged inside the vacuum cavity; the microwave antenna is assembled inside the microwave resonance cavity and axially penetrates through the microwave resonance cavity; two ends of the outer side of the vacuum cavity are respectively provided with the microwave generators; the two microwave generators are respectively connected with two ends of the microwave antenna through the microwave waveguides; a planar magnetic control plate is arranged between the vacuum cavity and the microwave resonance cavity; a sample to be plated with a film is arranged between the microwave resonance cavity and the planar magnetic control plate; and the microwave resonance cavity is internally provided with a plurality of gas spraying pipes. The planar magnetic control plate disclosed by the invention utilizes a hard magnetic material to generate a planar magnetic field to enhance the ionization efficiency of reaction gas and improve the film plating uniformity; and the planar magnetic control ECR-PECVD plasma source device has the advantages of high film plating speed and high film layer uniformity and is applicable to plating various thin films.

Description

technical field [0001] The invention relates to the technical field of plasma sources for plasma-enhanced chemical vapor deposition, in particular to a planar magnetron ECR-PECVD plasma source device. Background technique [0002] Plasma-enhanced chemical vapor deposition (ie: PECVD) is a well-known vacuum coating technique that has been used for decades. Using the PECVD process, conductive and non-conductive films can be deposited on various substrates. [0003] In the traditional PECVD device, the plasma source is capacitively coupled between two parallel electrodes by a radio frequency power source to excite the plasma, so it is called radio frequency-PECVD (RF-PECVD). The plasma source of this PECVD device is not easy to obtain good uniformity in a large area, and the coating rate is low, so it is not suitable for large-area, high-capacity production devices. [0004] Another plasma source of the ECR-PECVD device uses microwave surface wave coupling to generate plasma....

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Problems solved by technology

[0006] Although the linear microwave PECVD device has good uniformity in terms of microwave power distribution, the uniformity of the PECVD coating is also closely related to the concentration distribution of the reaction gas.

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