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Ground equivalent fluence calculating method for electronic component charged particle irradiation effect

A technology for electronic components and charged particles is applied in the field of ground equivalent fluence calculation of the irradiation effect of charged particles of electronic components, and can solve the problems of large errors in the ground simulation test of the irradiation effect.

Inactive Publication Date: 2013-05-22
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention aims to solve the technical problem of large errors in the ground simulation test of the radiation effect of electronic components, and provides a calculation method for the ground equivalent fluence of the radiation effect of electronic components charged particles

Method used

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  • Ground equivalent fluence calculating method for electronic component charged particle irradiation effect
  • Ground equivalent fluence calculating method for electronic component charged particle irradiation effect
  • Ground equivalent fluence calculating method for electronic component charged particle irradiation effect

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specific Embodiment approach 1

[0021] Specific implementation mode 1: The method for calculating the ground equivalent fluence of charged particle radiation effect of electronic components in this implementation mode is carried out according to the following steps:

[0022] 1. According to the service orbit and service period of electronic components, calculate the orbital charged particle energy spectrum of electronic components. The orbital charged particle energy spectrum includes the proton energy spectrum of the earth radiation belt, the electron energy spectrum of the earth radiation belt, and the proton energy spectrum and galactic cosmic ray proton spectrum;

[0023] 2. According to the orbital charged particle energy spectrum obtained in step 1, use the Monte-Carlo method or GEANT4 program to calculate the on-orbit ionization and displacement absorbed dose D1 that reaches the surface of the electronic component after passing through the protective layer, and the unit of the absorbed dose is rad;

...

specific Embodiment approach 2

[0029] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the orbital charged particle energy spectrum is the earth radiation belt proton energy spectrum, the earth radiation belt electron energy spectrum, the solar cosmic ray proton energy spectrum or the galactic cosmic ray proton energy spectrum . Others are the same as the first embodiment.

specific Embodiment approach 3

[0030] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the type of particles in Step 4 is high-energy electron source, proton source, heavy ion source, neutron or Co-60 source. Others are the same as those in Embodiment 1 or 2.

[0031] Verify beneficial effect of the present invention with following test:

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Abstract

The invention relates to a simulating test method of an electronic component and discloses a ground equivalent fluence calculating method for an electronic component charged particle irradiation effect. The ground equivalent fluence calculating method for the electronic component charged particle irradiation effect aims to solve the technical problem that a ground simulation test of the irradiation effect of the existing electronic component is large in experimental error. The ground equivalent fluence calculating method for the electronic component charged particle irradiation effect comprises the following steps: measuring the energy spectrum of orbit charged particles received by the electronic component; utilizing the method of Monte-Carlo or the program of GEANT4 to calculate the in-orbit lonization and the displacement absorbed dose D1 which pass through a protection layer and reach the surface of the electronic component; determining the thickness of a sensitive area of the electronic component; determining the types and energy of particles under the selected condition of the test, calculating the lonization and the displacement absorbed dose D2 of the sensitive area under the condition of the test through the method of Monte-Carlo or the program of GEANT4; and calculating the equivalent fluence phi and the irradiation time t under the condition of a laboratory according to D1=D2. The ground equivalent fluence calculating method for the electronic component charged particle irradiation effect is used for a simulation test of the electronic component.

Description

technical field [0001] The invention relates to a simulation test method for electronic components. Background technique [0002] High-energy charged particles in space can cause various forms of radiation damage to electronic components. The radiation effect (total dose effect) is mainly divided into ionization effect and displacement effect. Different space radiation sources, orbital environments and device properties are sensitive to different radiation effects. For example, protons and electrons in the earth's radiation belt will affect the total dose effect (including ionization effect and displacement effect); MOS devices are sensitive to ionization effects, while bipolar devices are sensitive to displacement effects. Therefore, before conducting the ground simulation test, it is necessary to analyze different types of devices and radiation effects to obtain a suitable ground equivalent simulation test method or method. [0003] At present, there are few domestic st...

Claims

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Application Information

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IPC IPC(8): G01T1/02
Inventor 李兴冀刘超铭肖景东杨德庄何世禹
Owner HARBIN INST OF TECH
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