Manufacture method of semiconductor device provided with metal grid lamination

Abstract

The invention provides a manufacture method of a semiconductor device provided with a metal grid lamination. The manufacture method of the semiconductor device provided with the metal grid lamination comprises the steps: forming shallow groove isolation structures on a semiconductor substrate, wherein the tops of the shallow groove isolation structures are higher than the surface of the semiconductor substrate; forming a filling layer on the semiconductor substrate and removing the filling layer which exceeds the tops of the shallow groove isolation structures, enabling the filling layer surface and the tops of the shallow groove isolation structures to be located on the same height through controlling the technology precision when the filling layer is removed, and enabling the tops of polycrystalline silicon virtual grids on the shallow groove isolation structures and the top of a polycrystalline silicon virtual grid between two adjacent shallow groove isolation structures to be located on the same height in the subsequent manufacture process. Therefore, a series of problems which are caused due to the fact that the tops of the polycrystalline silicon virtual grids are not located on the same height in an existing manufacturing method are avoided.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a semiconductor device with metal gate stacks. Background technique [0002] The current standard transistor structure in semiconductor technology is as follows: figure 1 As shown, a gate dielectric layer 2 is disposed on a semiconductor substrate 1 , and a polysilicon gate 3 is disposed on the gate dielectric layer 2 . The gate dielectric layer 2 is used to isolate the polysilicon gate 3 from the semiconductor substrate 1. The existing process generally uses silicon dioxide (SiO 2 ) layer as the gate dielectric layer of the transistor. The source 4 and the drain 5 of the transistor are arranged on both sides of the gate dielectric layer 2 and the polysilicon gate 3 , and the area between the source 4 and the drain 5 is called a channel. As the integration level of semiconductor integrated circuits is getting higher and higher, the...

AI Technical Summary

Problems solved by technology

When the interlayer dielectric layer 17 is deposited in the above step S3, the interlayer dielectric layer 17 is difficult to fill between the gate structure 18a and the gate structure 18b, resulting in poor filling effect

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