Circuit substrate structure and manufacturing method thereof

Abstract

The invention discloses a structure and a manufacture method of a circuit substrate. The structure of the circuit substrate mainly comprises a silicon oxide substrate layer and a plurality of wires, and each wire perpendicularly penetrates through the silicon oxide substrate layer. The silicon oxide substrate layer and the plurality of the wires can replace existing silicon distance layers and silicon penetrating guide holes to function to be applied to electric connection between an upper surface circuit and a lower surface circuit which are located in a distance piece. The manufacture of the existing silicon penetrating guide holes is time-wasting, by contrast, the manufacture method of the circuit substrate combines a wire bonding technology and a sol-gel method to manufacture the wires and the silicon oxide substrate layer, machining time can be saved, and manufacture cost can be reduced.

Description

Technical field [0001] The invention relates to a circuit substrate structure and a manufacturing method thereof, in particular to a circuit substrate structure combining a wire bonding process and a sol-gel method to replace silicon through holes and a manufacturing method thereof. Background technique [0002] In the current semiconductor technology field, TSV (Through-Silicon Via) technology is often used for electrical connections between the upper and lower surface circuits of the same chip or silicon spacer (interposer) to be applied to stacked In chip packaging, the silicon through vias is conducive to the development of 3D stacked packaging technology and can effectively improve the integration and performance of the chip. [0003] The existing through-silicon via method is to etch a columnar hole on a silicon substrate (such as a silicon wafer), and first form an insulating wall (such as chemical vapor deposition, Chemical Vapor Deposition, CVD) on the hole wall, and the i...

AI Technical Summary

Problems solved by technology

However, dry etching using plasma (plasma) can only be performed on one silicon substrate at a time, and it is time-consuming to manufacture silicon deep holes, so the time and cost of the entire TSV processing are relatively greatly increased.

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