Furnace and method for preparing quasi-single crystal silicon

Abstract

The invention discloses a preparation furnace and a preparation method of pseudo single crystal silicon, and belongs to the field of preparation of single crystal silicon. The preparation furnace comprises a furnace body, a clamping mechanism, a support rod, a cooling pipeline, a crucible, a graphite block, a lifting mechanism, a heating device and a thermal insulation wall, wherein the crucible is arranged at the bottom of the interior of the furnace body, the bottom of the crucible is arranged on the lifting mechanism by the graphite block, and the lifting mechanism stretches out of the furnace body. The heating device is arranged on the periphery of the crucible, and the thermal insulation wall is arranged between the heating device and the inner wall of the furnace body. The clamping mechanism is arranged in the furnace body above the crucible through the support rod, and the clamping mechanism is connected with the cooling pipeline which stretches out of the furnace body. The furnace body of the preparation furnace is simple in design, and can achieve preparation of oversized pseudo single crystal without needing for a rotating mechanism for pulling method growth, is low in cost, small in energy consumption, high in growth quality, and beneficial to reducing production cost of a solar battery, and has important significance on reducing production cost of a solar battery piece and improving efficiency of the solar battery piece.

Description

technical field [0001] The invention relates to the field of preparation of quasi-single crystal silicon, in particular to a preparation furnace and a preparation method of quasi-single crystal silicon. Background technique [0002] Solar cells originate from the photovoltaic effect in semiconductors. When a beam of light with energy greater than the forbidden band width of the semiconductor material is vertically incident on the surface of the pn junction, the photons will be absorbed within a certain depth from the surface. If the junction depth is less than the light absorption The reciprocal of the coefficient a is 1 / a, and the incident light generates electron-hole pairs near the junction. The photogenerated carriers that are less than the diffusion length from the junction region reach the junction region through diffusion, and then gather with the photogenerated carriers generated in the junction region to form a photogenerated current from the n region to the p regio...

AI Technical Summary

Problems solved by technology

At present, polycrystalline silicon ingots used in solar cells are generally obtained by casting ingots. The production equipment and production technology are very mature, and 800Kg polycrystalline silicon ingots can already be obtained. The power generation efficiency of single crystal silicon is about 20% higher than that of polycrystalline silicon, but single crystal silicon is It is grown based on the single crystal pulling process of the pulling method. The single crystal rod pulled out in the single crystal pulling process is an obvious source of heat dissipation, so there are disadvantages in the process of high energy consumption, low production efficiency, and poor cost performance.

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