Electrostatic Discharge Protection Device

Abstract

An electrostatic discharge protection device includes at least a first transistor and at least a second transistor. The first transistor has a control terminal, a first terminal, a second terminal and a base, the control terminal and the second terminal of the first transistor are coupled to each other, and the first terminal of the first transistor is coupled to one of the bonding pad and the voltage rail. The second transistor also has a control terminal, a first terminal and a second terminal, the first terminal of which is coupled to the base of the first transistor, the base of the second transistor is coupled to the second terminal of the first transistor, and The second terminal of the second transistor is coupled to the bonding pad and the other of the voltage rails.

Description

technical field [0001] The present invention relates to an electrostatic discharge protection device, in particular to an electrostatic discharge protection device using a parasitic silicon controlled rectifier (Silicon Controlled Rectifier, SCR) for electrostatic discharge protection. Background technique [0002] With the development of semiconductor technology, the gate oxide layer (gate oxide) of transistors in current semiconductor technology is getting thinner and thinner, which makes it easier to be damaged when electrostatic discharge occurs. Therefore, developing an electrostatic discharge protection technology that can cope with the current semiconductor process technology has become an important issue for designers in this field. [0003] In existing ESD protection devices, ESD protection elements with thinner gate oxide layers are commonly used to construct them. Such an ESD protection element with a thinner gate oxide layer will generate a larger leakage curren...

AI Technical Summary

Problems solved by technology

However, the silicon-controlled rectifiers in the prior art are difficult to trigger (requiring a higher trigger voltage), which often occurs before the silicon-controlled rectifier is activated, and the components in the circuit (with thinner gate oxide layers) are The phenomenon of damage occurs, and the protective function of electrostatic discharge cannot be effectively realized

Images