Structure and method of restraining through dislocation in mutation epitaxial growth
A technology of penetrating dislocation and epitaxial growth, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as inability to effectively solve dislocation defects in abnormal epitaxial growth, and achieve the effect of improving luminous efficiency
Inactive Publication Date: 2013-06-26
BEIJING UNIV OF POSTS & TELECOMM
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[0006] The technical problem to be solved by the present invention is to provide a structure and method for suppressing threading dislocations in abnormal epitaxial growth, so as to realize applicable For the purpose of heterogeneous epitaxial materials of semiconductor quantum devices, the threading dislocation density is reduced to the device application level, and the luminous efficiency, reliability and service life of heterogeneous epitaxial quantum material lasers are greatly improved. Scale Quantum Optoelectronic Device Integration Brings Good Facilitation
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[0086] like Figure 8As shown, this embodiment describes a structure for suppressing threading dislocations in anomalous epitaxial growth, including a substrate grown sequentially along the material growth direction, an anomalous buffer layer, a multi-layer self-organized quantum dot structure, several layers of super strain The lattice structure and the active region, the multilayer self-organized quantum dot structure achieves the critical condition for quantum dots to suppress threading dislocations.
[0087] The invention reduces the threading dislocation density to the device application level, greatly improves the luminous efficiency, reliability and service life of the heterogeneous epitaxial quantum material laser, and brings good promotion to the design of semiconductor quantum optoelectronic devices and the integration of large-scale quantum optoelectronic devices effect.
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The invention discloses a structure and a method of restraining through dislocation in mutation epitaxial growth. The method of restraining the through dislocation in the mutation epitaxial growth comprises the following steps: a suitable quantum dot geometric model growing on a strain buffer layer is selected as a theoretical model; according to the mutual function of a through and mismatch dislocation strain field of the theoretical model and a lattice mismatch strain field and the mutual function of the dislocation strain field and a free surface, the stress-strain distribution condition of the entire system can be obtained by utilizing a finite element method; based on the stress-strain distribution condition and the energy balance principle, a critical condition utilizing a quantum dot to restrain through dislocation is obtained; and a structure of restraining the through dislocation in the mutation epitaxial growth is formed. The structure comprises a substrate, a mutation buffer layer, a multilayer self-organization quantum dot structure and an active region, wherein the multilayer self-organization quantum dot structure meets the critical condition utilizing a quantum dot to restrain through dislocation. The structure and the method of restraining the through dislocation in the mutation epitaxial growth effectively restrain through dislocation density, and enable the through dislocation density to reach the device application level.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a structure and method for suppressing threading dislocations in heterogeneous epitaxial growth. Background technique [0002] Quantum optoelectronic devices based on III-V compound semiconductors have always been the focus of research in the fields of nanoelectronics and optical communication, and are also one of the driving forces for the rapid development of the national information technology industry. Because of its strong radiative recombination efficiency and emission efficiency in the visible and infrared bands, it is widely used in luminescence, biosensing, data storage and other fields. For example, lasers based on III-V compound quantum heterostructure materials have become the core optoelectronic devices for realizing high-performance optical communication band light sources, and are one of the preferred solutions for next-generation optical communication laser...
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IPC IPC(8): G06F17/50
Inventor 刘玉敏周帅俞重远叶寒冯昊
Owner BEIJING UNIV OF POSTS & TELECOMM