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A Packaging Structure for Improving Brightness of Vertical Light-Emitting Diode Chips

A technology of light-emitting diodes and packaging structures, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as brightness reduction, low production cost, and poor efficiency of blue light conversion to white light, and achieve the effect of enhancing the probability of light output and increasing light intensity

Active Publication Date: 2016-04-20
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, front-mounted LED chips are the most widely used on the application side. Its advantage is that the production cost is low and the yield rate is high. Therefore, the use of front-mounted LED chips is more popular at present. Generally, it is a high-power light-emitting diode lamp bead, and the high-power front-mounted chip required by it can no longer be met. The development of vertical light-emitting diode chips has emerged as the times require. The vertical electrode design makes the vertical light-emitting diode chips can withstand large power usage, and can generally be used The power of LED chip is about 1.5 times that of the formal LED chip. However, due to the design of the vertical electrode, the vertical LED chip must also use a conductive substrate. Considering the cost performance, the silicon substrate becomes an ideal choice.
[0003] Traditional silicon substrate LED vertical chip packaging structure, such as figure 1 As shown, the blue light provided by the light-emitting diode chip and the blue light enters the phosphor to excite yellow light, and the blue light and the yellow light are mixed to generate white light. During the process of blue light entering the phosphor particle, the phosphor particle will only absorb part of the blue light. , and the remaining blue light will be refracted into the next phosphor particle, so in the process of a series of light mixing, the blue light will be continuously refracted to change the light path, and even some blue light will be reflected back to the chip, because the silicon substrate will All light in the range of visible light is absorbed, especially blue light and yellow light in the visible range have a certain absorption rate, so when vertical light-emitting diodes are sealed in lighting systems, such as LED lamp beads, it will cause blue light conversion The efficiency of white light becomes worse, and its brightness will decrease

Method used

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  • A Packaging Structure for Improving Brightness of Vertical Light-Emitting Diode Chips
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  • A Packaging Structure for Improving Brightness of Vertical Light-Emitting Diode Chips

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Experimental program
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Effect test

Embodiment 1

[0023] see figure 2 As shown, a packaging structure for improving the brightness of a vertical light-emitting diode chip in this embodiment includes a support system, which is mainly used to carry a silicon substrate LED vertical chip 3. The support system can be a metal support 1, and its function is electrode conduction and For heat dissipation; the plastic cup 2 is connected to the periphery of the bracket system, and the shape of the plastic cup can be adjusted according to the need to control the light shape; the silicon substrate LED chip 3 can be placed on the bracket system by means of solid crystal; the package with yellow YAG The glue 5 is evenly distributed on the periphery of the LED chip 3 on the silicon substrate by means of coating; a bubble structure 8 is formed at the interface between the side of the silicon substrate 4 with vertical sides and the encapsulation glue 5 .

[0024] In the packaging structure for improving the brightness of the vertical light-em...

Embodiment 2

[0027] see image 3 As shown, different from Embodiment 1, this embodiment is another packaging structure for improving the brightness of the vertical light-emitting diode chip. The silicon substrate 4 has an inclined angle with the horizontal plane on the side close to the LED chip and from top to bottom Narrowed sides. The angle range of the inclination angle α is not less than 5° and not more than 85°, and the inclination angle α is selected as 60° in this embodiment.

[0028] In the packaging structure for improving the brightness of the vertical light-emitting diode chip, since the side of the silicon substrate 4 is inclined from top to bottom, it is easier to form the bubble structure 8 at the interface between the side of the silicon substrate 4 and the encapsulation glue 5 . Using packaging glue, air bubbles, and the difference in refractive index of the silicon substrate material acts as a reflective layer to reduce or prevent the light reflected by the LED chip 3 fr...

Embodiment 3

[0030] see Figure 4 As shown, different from Embodiment 1, this embodiment is yet another packaging structure for improving the brightness of the vertical light-emitting diode chip. The silicon substrate 4 has an angle of inclination with the horizontal plane on the side close to the LED chip and from top to bottom. The narrowed first side and the second side perpendicular to the horizontal plane on the side away from the LED chip. The angle range of the inclination angle α is not less than 5° and not more than 85°, and the inclination angle α is selected as 45° in this embodiment.

[0031] In the package structure for improving the brightness of the vertical light-emitting diode chip, since the side of the silicon substrate 4 is roughly divided into two sections, that is, there is a first side on the side close to the LED chip that is inclined to the horizontal plane and narrows from top to bottom. And the second side perpendicular to the horizontal plane on the side away f...

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PUM

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Abstract

The invention provides a packaging structure for vertical light-emitting diode chip brightness, which at least includes a support system, a plastic cup connected to the periphery of the support system, an LED chip containing a light-absorbing substrate placed on the support system, and packaging glue distributed on the silicon substrate The periphery of the LED chip is characterized in that a bubble structure is formed at the interface between the side of the light-absorbing substrate and the encapsulation glue. Utilize the difference in refractive index of packaging glue, air bubbles, and silicon substrate materials to form a reflective layer, thereby effectively reducing or avoiding the light that would have been absorbed by the substrate, and reflecting it out of the packaging structure, enhancing the probability of light output, and then improving the vertical light emission level. The light intensity of the tube chip.

Description

technical field [0001] The invention relates to a packaging structure for improving the brightness of a vertical light-emitting diode chip, which avoids light loss caused by contact with a light-absorbing substrate through the design of a bracket, and improves the packaging brightness of a vertical chip, belonging to the field of light-emitting diodes. Background technique [0002] Light-emitting diode chips can be roughly divided into three categories according to their structure, namely front-mounted light-emitting diode chips, flip-chip light-emitting diode chips, and vertical light-emitting diode chips. At present, front-mounted LED chips are the most widely used on the application side. Its advantage is that the production cost is low and the yield rate is high. Therefore, the use of front-mounted LED chips is more popular at present. Generally, the lamp beads of high-power light-emitting diodes cannot meet the requirements of high-power front-mounted chips, so the deve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/52H01L33/60
CPCH01L33/56H01L2933/0091
Inventor 赵志伟
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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