A Packaging Structure for Improving Brightness of Vertical Light-Emitting Diode Chips
A technology of light-emitting diodes and packaging structures, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as brightness reduction, low production cost, and poor efficiency of blue light conversion to white light, and achieve the effect of enhancing the probability of light output and increasing light intensity
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Embodiment 1
[0023] see figure 2 As shown, a packaging structure for improving the brightness of a vertical light-emitting diode chip in this embodiment includes a support system, which is mainly used to carry a silicon substrate LED vertical chip 3. The support system can be a metal support 1, and its function is electrode conduction and For heat dissipation; the plastic cup 2 is connected to the periphery of the bracket system, and the shape of the plastic cup can be adjusted according to the need to control the light shape; the silicon substrate LED chip 3 can be placed on the bracket system by means of solid crystal; the package with yellow YAG The glue 5 is evenly distributed on the periphery of the LED chip 3 on the silicon substrate by means of coating; a bubble structure 8 is formed at the interface between the side of the silicon substrate 4 with vertical sides and the encapsulation glue 5 .
[0024] In the packaging structure for improving the brightness of the vertical light-em...
Embodiment 2
[0027] see image 3 As shown, different from Embodiment 1, this embodiment is another packaging structure for improving the brightness of the vertical light-emitting diode chip. The silicon substrate 4 has an inclined angle with the horizontal plane on the side close to the LED chip and from top to bottom Narrowed sides. The angle range of the inclination angle α is not less than 5° and not more than 85°, and the inclination angle α is selected as 60° in this embodiment.
[0028] In the packaging structure for improving the brightness of the vertical light-emitting diode chip, since the side of the silicon substrate 4 is inclined from top to bottom, it is easier to form the bubble structure 8 at the interface between the side of the silicon substrate 4 and the encapsulation glue 5 . Using packaging glue, air bubbles, and the difference in refractive index of the silicon substrate material acts as a reflective layer to reduce or prevent the light reflected by the LED chip 3 fr...
Embodiment 3
[0030] see Figure 4 As shown, different from Embodiment 1, this embodiment is yet another packaging structure for improving the brightness of the vertical light-emitting diode chip. The silicon substrate 4 has an angle of inclination with the horizontal plane on the side close to the LED chip and from top to bottom. The narrowed first side and the second side perpendicular to the horizontal plane on the side away from the LED chip. The angle range of the inclination angle α is not less than 5° and not more than 85°, and the inclination angle α is selected as 45° in this embodiment.
[0031] In the package structure for improving the brightness of the vertical light-emitting diode chip, since the side of the silicon substrate 4 is roughly divided into two sections, that is, there is a first side on the side close to the LED chip that is inclined to the horizontal plane and narrows from top to bottom. And the second side perpendicular to the horizontal plane on the side away f...
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