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Codope ZnO thin film with high visible light transmittance and high piezoelectric constants

A co-doping and thin-film technology, applied in the material selection and device material selection for piezoelectric devices or electrostrictive devices, to achieve the effects of increasing the valence band position, increasing the forbidden band width, and improving piezoelectricity

Active Publication Date: 2013-07-10
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in these studies, ZnO and AlN were doped into light yellow and semi-transparent state; although the piezoelectric coefficient is improved, it is difficult to be applied in fields requiring transparent films such as flexible electronic devices and touch screens.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The preparation of embodiment 1, Mg and V co-doped ZnO film

[0014] Using MgZnO ceramic target and metal V target for magnetron sputtering reaction co-sputtering to prepare Mg and V co-doped ZnO thin film on quartz substrate: Among them, MgZnO ceramic target is sputtered by radio frequency power supply and radio frequency target, the power is 100W, The V target is sputtered with a DC power supply and a DC target, the power is 7W, and the sputtering gas is Ar:O 2 =60:10 (SCCM), the total sputtering pressure is 0.8 Pa, the sputtering time is 120 minutes, the thickness of the obtained film is 300nm, and then rapid annealing is carried out at 500°C for 5min in an oxygen atmosphere to obtain Mg and V co- Doped ZnO film, the composition is: magnesium (Mg) is 2.1at.% (atomic percentage), vanadium (V) is 1.6at.%, zinc (Zn) is 46.3at.%, oxygen (O) is 50at.% .

[0015] The piezoelectric constant d of the ZnO thin film prepared in this embodiment at room temperature 33 It is 1...

Embodiment 2

[0016] The preparation of embodiment 2, Mg and Cr co-doped ZnO film

[0017] Using MgZnO ceramic target and metal Cr target for magnetron sputtering reaction co-sputtering to prepare Mg and Cr co-doped ZnO film on quartz substrate: Among them, MgZnO ceramic target is sputtered by radio frequency power supply and radio frequency target, the power is 100W, The Cr target is sputtered with a DC power supply and a DC target, the power is 8W, and the sputtering gas is Ar:O 2 =60:10 (SCCM), the total sputtering pressure is 0.8Pa, the sputtering time is 120 minutes, the thickness of the obtained film is 300nm, and then rapid annealing is carried out at 500°C for 5min in an oxygen atmosphere to obtain Mg and Cr co- Doped ZnO film, the composition is: magnesium (Mg) is 2.1at.% (atomic percentage), chromium (Cr) is 1.7at.%, zinc (Zn) is 46.2at.%, oxygen (O) is 50at.% .

[0018] The piezoelectric constant d of the ZnO thin film prepared in this embodiment at room temperature 33 It is 1...

Embodiment 3

[0019] Preparation of embodiment 3, Mg and Fe co-doped ZnO film

[0020] Using MgZnO ceramic target and metal Fe target for magnetron sputtering reaction co-sputtering to prepare Mg and Fe co-doped ZnO thin film on the quartz substrate: Among them, the MgZnO ceramic target is sputtered by radio frequency power supply and radio frequency target, the power is 100W, The Fe target is sputtered with a DC power supply and a DC target, the power is 6W, and the sputtering gas is Ar:O 2 =60:10 (SCCM), the total sputtering pressure is 0.8Pa, the sputtering time is 120 minutes, the thickness of the obtained film is 300nm, and then rapid annealing is carried out at 500°C for 5min in an oxygen atmosphere to obtain Mg and Fe co- Doped ZnO film, the composition is: magnesium (Mg) is 2.1at.% (atomic percentage), iron (Fe) is 1.4at.%, zinc (Zn) is 46.5at.%, oxygen (O) is 50at.% .

[0021] The piezoelectric constant d of the ZnO thin film prepared in this embodiment at room temperature 33 It...

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Abstract

The invention discloses a codope ZnO thin film. The ZnO thin film is composed of class a elements, class b elements and ZnO, wherein the class a elements include at least one of Mg and Ga, the class b elements include at least one of V, Cr, Fe and Mn, the atomic percentage of the class a elements is 1%-3.4%, the atomic percentage of the class b elements is 1%-2%, the atomic percentage of Zn is 44.6%-48%, and the balance is O. a piezoelectric coefficient of the codope ZnO thin film is improved to more than 50 p C / N, and visible light transmittance reaches 90%.

Description

technical field [0001] The invention relates to a co-doped ZnO thin film with high visible light transmittance and piezoelectric constant, which belongs to the field of new materials and information technology. Background technique [0002] Piezoelectric materials are widely used in surface acoustic wave devices, pressure sensors, energy harvesting and other devices. Through the piezoelectric properties of the material, the conversion of sound to electricity and force to electricity is carried out, and information transmission, processing and energy conversion are carried out. In order to obtain a good conversion effect, it is generally desired that the piezoelectric coefficient of the piezoelectric material is large. Traditional materials with high piezoelectric constants are mainly lead-containing ceramic materials such as lead zirconate titanate. But this material is difficult to prepare into a thin film, and contains lead, which is harmful to the human body. Today, th...

Claims

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Application Information

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IPC IPC(8): H01L41/18
Inventor 曾飞刘宏燕杨晶潘峰罗景庭
Owner TSINGHUA UNIV
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