Preparation method of bismuth layer structure ferroelectric ceramic material with chemical formula srbi2ti2o9 for preparing thin film
A chemical formula, bismuth layered technology, applied in the field of preparation of bismuth layered ferroelectric materials, can solve problems such as human and environmental hazards, PZT fatigue, large remanent polarization, etc., to achieve uniform doping, high piezoelectric coefficient, Effect of High Temperature Dielectric Properties
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Embodiment 1
[0022] The chemical formula used to prepare the film is SrBi 2 Ti 2 o 9 The preparation method of the bismuth layer structure ferroelectric ceramic material, concrete steps are as follows:
[0023] (1) Prepare solution A with tetrabutyl titanate and acetylacetone at a volume ratio of 1:1: take 100ml tetrabutyl titanate, use 100ml acetylacetone as a chelating agent, and use a pipette to buffer 100ml acetylacetone Slowly drop into the tetrabutyl titanate solution, and at the same time, in order to keep the temperature of the solution constant, put the beaker containing the solution in ice water at 0°C after mixing, and keep stirring the mixed solution to prevent the heat generated during the chelation process Hydrate the mixed solution; fully stir the mixed solution on a magnetic stirrer for 24 hours to obtain a clear yellow-brown transparent A solution;
[0024] (2) Weigh 154g of bismuth nitrate and 31g of strontium acetate, prepare the solution with ethylene glycol as the s...
Embodiment 2
[0032] The sintering temperature is 1050° C., the heating rate is 3° C. / min, and other conditions are the same as in Example 1.
Embodiment 3
[0034] The sintering temperature is 1100° C., the heating rate is 3° C. / min, and other conditions are the same as in Example 1.
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