Preparation method of bismuth layer structure ferroelectric ceramic material with chemical formula srbi2ti2o9 for preparing thin film

A chemical formula, bismuth layered technology, applied in the field of preparation of bismuth layered ferroelectric materials, can solve problems such as human and environmental hazards, PZT fatigue, large remanent polarization, etc., to achieve uniform doping, high piezoelectric coefficient, Effect of High Temperature Dielectric Properties

Inactive Publication Date: 2011-12-07
SHANDONG WOMENS UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In perovskite-structured ferroelectric materials, perovskite-type Pb(Zr,Ti)O 3 (PZT) materials have attracted extensive attention due to their large remanent polarization (Pr), low coercive field (Ec) and high Curie temperature, but PZT has serious fatigue problems
At the same time, because PZT contains a large amount of lead elements, they will bring great harm to human beings and the environment during the process of preparation and use.

Method used

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  • Preparation method of bismuth layer structure ferroelectric ceramic material with chemical formula srbi2ti2o9 for preparing thin film
  • Preparation method of bismuth layer structure ferroelectric ceramic material with chemical formula srbi2ti2o9 for preparing thin film
  • Preparation method of bismuth layer structure ferroelectric ceramic material with chemical formula srbi2ti2o9 for preparing thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The chemical formula used to prepare the film is SrBi 2 Ti 2 o 9 The preparation method of the bismuth layer structure ferroelectric ceramic material, concrete steps are as follows:

[0023] (1) Prepare solution A with tetrabutyl titanate and acetylacetone at a volume ratio of 1:1: take 100ml tetrabutyl titanate, use 100ml acetylacetone as a chelating agent, and use a pipette to buffer 100ml acetylacetone Slowly drop into the tetrabutyl titanate solution, and at the same time, in order to keep the temperature of the solution constant, put the beaker containing the solution in ice water at 0°C after mixing, and keep stirring the mixed solution to prevent the heat generated during the chelation process Hydrate the mixed solution; fully stir the mixed solution on a magnetic stirrer for 24 hours to obtain a clear yellow-brown transparent A solution;

[0024] (2) Weigh 154g of bismuth nitrate and 31g of strontium acetate, prepare the solution with ethylene glycol as the s...

Embodiment 2

[0032] The sintering temperature is 1050° C., the heating rate is 3° C. / min, and other conditions are the same as in Example 1.

Embodiment 3

[0034] The sintering temperature is 1100° C., the heating rate is 3° C. / min, and other conditions are the same as in Example 1.

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Abstract

The invention relates to a preparation method of a bismuth layer structured ferroelectric material, and concretely relates to a preparation method of a bismuth layer structured ferroelectric ceramic material of chemical formula of SrBi2Ti2O9 for preparing films. A purpose of the invention is to prepare the bismuth layer structured ferroelectric ceramic material which can replace a PZT material. The purpose of the invention is realized by adopting the following technical scheme that the material is synthesized by adopting a sol-gel process with tetrabutyl titanate, acetylacetone, bismuth nitrate, strontium acetate and glycol as raw materials. The preparation method of the present invention has advantages that: the material performs a high temperature dielectric property, high piezoelectriccoefficient and a good ferroelectric property, can replace lead ferroelectric materials under a high temperature, and can be applied to fields of high voltage capacitors, ferroelectric memories, piezoelectric ceramic oscillators and the like.

Description

technical field [0001] The invention relates to the preparation of a bismuth layer structure ferroelectric material, specifically a kind of chemical formula for preparing thin films is SrBi 2 Ti 2 o 9 Preparation method of bismuth layered structure ferroelectric ceramic material. Background technique [0002] In recent years, because ferroelectric materials can be used in non-volatile ferroelectric random access memory (NVFRAM) and so on, it has attracted extensive attention. Bi-layered perovskite structure ferroelectric materials are widely used in non-volatile ferroelectric random access memory due to their excellent fatigue resistance. Applied research is increasing day by day. In perovskite-structured ferroelectric materials, perovskite-type Pb(Zr,Ti)O 3 (PZT) materials have attracted widespread attention due to their large remanent polarization (Pr), low coercive field (Ec) and high Curie temperature, but PZT has serious fatigue problems. At the same time, because ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/475C04B35/622
Inventor 范素华
Owner SHANDONG WOMENS UNIV
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