Argon isolation system for sapphire crystal growth furnace
A technology of isolation system and crystal growth furnace, applied in the field of argon isolation system, can solve the problems such as the influence of production efficiency of sapphire crystal growth furnace and the inability to continuously supply gas.
Active Publication Date: 2013-07-17
上海至纯系统集成有限公司
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[0008] The invention discloses an argon gas isolation system for a sapphire crystal growth furnace, which can effectively overcome the problem in the prior art that the argon gas isolation system cannot continuously supply gas, which affects the production efficiency of the sapphire crystal growth furnace
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[0026] The invention discloses an argon isolation system for a sapphire crystal growth furnace, which can effectively overcome the problem in the prior art that the argon isolation system cannot continuously supply gas and thus affects the production efficiency of the sapphire crystal growth furnace.
[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0028] Please refer to figure 1 , figure 1 It is a schematic diagram of an argon isolation system used in a sapphire crystal growth furnace in a specific embod...
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The invention discloses an argon isolation system for a sapphire crystal growth furnace. The system comprises an air supply trunk, two air supply branches, two argon bottles, an air extracting trunk road and an air extracting device. With the above arrangement, the argon isolation system for the sapphire crystal growth furnace can effectively solve the problem that the production efficiency of the sapphire crystal growth furnace is affected because the argon isolation system in the prior art cannot supply air continuously. In a preferred solution, a first on-line filter and a first flow monitoring controller are sequentially arranged on the air supply trunk between a pressure reducing valve and the cavity of the sapphire crystal growth furnace in the airflow direction. With the above arrangement, the actual flow rate of argon can be timely known through the first flow monitoring controller and the precision for adjusting the argon flow is relatively high, by the preferred solution provided by the invention.
Description
technical field [0001] The invention relates to the field of sapphire crystal growth equipment, in particular to an argon isolation system for a sapphire crystal growth furnace. Background technique [0002] With the rapid development of my country's economy, LED display technology has made continuous progress. Materials used for LED substrates mainly include silicon, silicon carbide, sapphire and the like. However, due to the poor lattice matching of silicon single crystals, it cannot be used commercially, and the cost of silicon nitride single crystals is relatively high. Therefore, sapphire is an ideal choice for LED substrate materials. [0003] At present, in the production process of the sapphire crystal growth furnace, in order to prevent the raw materials from reacting with the air at high temperature, and then affect the quality of the final product. Therefore, in the production process of sapphire crystal growth furnace, it is necessary to isolate the raw materia...
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Login to View More IPC IPC(8): C30B29/20C30B35/00
Inventor 徐力蒋渊陈盛云
Owner 上海至纯系统集成有限公司