Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

chamber heating device

A heating device and chamber technology, applied in discharge tubes, electrical components, circuits, etc., can solve problems such as uneven chip temperature, inconsistent surface etching rate, chip thermal field, flow field fluctuations, etc., to maintain vacuum requirements, the effect of avoiding unevenness

Active Publication Date: 2016-01-20
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For example, in the plasma etching process, the temperature of the chip is not uniform, the rate of surface etching is inconsistent, the surface morphology is not uniform, and the plasma is prone to local inhomogeneity, which makes the thermal field and flow field around the chip fluctuate, thus affecting Uniformity and reliability of the plasma process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • chamber heating device
  • chamber heating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] combine figure 1 , figure 2 As shown, the embodiment of the present invention provides a chamber heating device, including a slide table 1, a slide table heating structure 2, a chamber wall heating structure 3, an upper electrode 4, a chamber upper cover 5, and a reaction chamber as 6. Support plate 7, upper air inlet 8, lower air inlet 9 and support ring 10. Wherein, the slide table 1 is set at the center of the chamber wall heating structure 3 . The chamber wall heating structure 3 is installed on the inner wall of the reaction chamber 6 . The heating structure 2 of the loading table is arranged at the bottom of the loading table. The upper air inlet 8 is arranged on the upper cover 5 of the chamber. The upper electrode 4 is connected with the upper cover 5 of the chamber. The support plate 7 is fixed on the bottom of the chamber wall heating structure 3 and connected with the slide table 1 through the support ring 10 .

[0039] Wherein, the chamber wall heatin...

Embodiment 2

[0045]The difference between this embodiment and Embodiment 1 is that, in the chamber wall heating structure, the first heating coil 12 consists of 100 turns. The tube diameter of the first heating coil 12 is 200 mm, the diameter is 10000 mm, and the helical pitch is 1000 mm. The distance from the tube wall of the first heating coil to the lining wall in the chamber is 10 mm. The distance between the outer wall of the liner 11 in the chamber and the inner wall of the reaction chamber 6 is 20mm. The thickness of the inner and outer walls of the bushing 11 in the chamber is 30 mm, made of molybdenum. The diameter of the inner wall of the liner 11 in the chamber is 5000mm. The lead-out electrode voltage Vt is 2000V, and the heating power Pt is 5000W.

[0046] In the loading stage heating structure 2 , the number of turns of the second heating coil 13 is 5 turns. The pipe diameter of the second heating coil 13 is 5 mm, the diameter of the innermost coil of the second heating c...

Embodiment 3

[0049] The difference between this embodiment and Embodiment 1 is that, in the chamber wall heating structure, the first heating coil 12 consists of 25 turns. The tube diameter of the first heating coil 12 is 100 mm, the diameter is 5000 mm, and the helical pitch is 500 mm. The distance from the wall of the first heating coil 12 to the lining wall in the chamber is 5 mm. The distance between the outer wall of the liner 11 in the chamber and the inner wall of the reaction chamber 6 is 10 mm. The inner and outer walls of the bushing 11 in the chamber have a thickness of 15mm and are made of SiC material. The diameter of the inner wall of the lining 11 in the chamber is 2500mm. The lead-out electrode voltage Vt is 1000V, and the heating power Pt is 5000W.

[0050] In the heating structure of the loading stage, the second heating coil 13 consists of 25 turns. The pipe diameter of the second heating coil 13 is 50 mm, the diameter of the outermost coil of the second heating coil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a cavity heating device. The cavity heating device comprises a cavity wall heating structure and / or a slide holder heating structure. The cavity wall heating structure is arranged on the inner wall of a reaction cavity. The slide holder heating structure is arranged at the bottom of a slide holder. The cavity heating device can reduce or avoid nonuniformity caused by the fact that plasma starting is unsymmetrical in structure in the plasma etching process. An electrode fixing structure is free of air discharge under the plasma starting condition and can meet requirement of a vacuum cavity for vacuum degree.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a heating device and a chamber heating device. Background technique [0002] The heating used in the semiconductor process has various forms. Choosing a reasonable and reliable heating device has a very important impact on improving the temperature uniformity of the chip on the loading table, removing process pollutants, and reducing reaction by-products. It is also important for the reliability of the semiconductor process. and stability play an important role. [0003] For example, in the plasma etching process, the temperature of the chip is not uniform, the rate of surface etching is inconsistent, the surface morphology is not uniform, and the plasma is prone to local inhomogeneity, which makes the thermal field and flow field around the chip fluctuate, thus affecting Uniformity and reliability of the plasma process. Contents of the invention [0004] An ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01J37/32H01J37/02
Inventor 席峰李楠李勇滔张庆钊夏洋
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com