The invention provides a nitrogen sources ionizing method applied to a gas phase deposition growth system of semiconductor materials. In a growth system of semiconductor materials such as CVD, MOCVD, HVPE and MBE, etc., an external radio frequency field is applied to ionize nitrogen sources. The high frequency electric current is applied to electrodes of capacitances or inductance coils, and the high frequency electric field is applied by a gas path arranged between the capacitance plates or circling the inductance coils to speed up electrons and ionize gas molecules to generate plasmas. The device consists of a metallic flange(1), a cooling water pipeline(2), a quartz outer cover(3), a quartz fairing(5), a metal cover(6), a parallel plate capacitor(7), a thermoelectric couple(8), graphite(9), a bleeder hole(10), a radio frequency adapter(11), a radio frequency power source(12) and an air inlet(13), wherein the metallic flange(1) and the metal cover(6) are arranged on both ends of the quartz outer cover(3), and the gas path circling the air inlet(13) or the gas path of a growth platform is provided with capacitances or inductance coupling elements.