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A flat plate electrode fixing structure

A fixed structure, flat electrode technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problem of plasma inhomogeneity, achieve the effect of wide distribution range of uniformity, good uniformity effect, and maintain vacuum degree

Active Publication Date: 2011-12-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem of the existing plasma electrode being fixed in the middle of the chamber and the uneven plasma caused by the fixing structure, the present invention provides a flat electrode fixing structure, including an insulating support on which a plurality of gas inlets are arranged. hole, the upper and lower electrodes are evenly distributed around the inlet hole

Method used

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Embodiment Construction

[0015] The technical solutions of the present invention will be further described below with reference to the accompanying drawings and embodiments.

[0016] like figure 2 As shown, the embodiment of the present invention provides a plate electrode fixing structure, including an insulating support 13, a plurality of air inlet holes are arranged on the insulating support 13, and the upper electrode 12 and the lower electrode 14 are evenly distributed around the air inlet holes. The upper electrode 12 and the lower electrode 14 are metal electrodes, and the material of the metal electrodes may be, but not limited to, graphite, molybdenum, galvanized aluminum, stainless steel, aluminum alloy, or oxygen-free copper. The thickness of the insulating support 13 is 5 to 1000 mm. The insulating support 13 is made of insulating material, and the insulating material may be, but not limited to, ceramic, quartz, polytetrafluoroethylene or polycarbonate. The frequency of the radio freque...

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Abstract

The invention discloses a plate electrode fixing structure, belonging to the technical field of plasma etching. The plate electrode fixing structure comprises an insulating support, the insulating support is provided with a plurality of air inlets, and upper electrodes and lower electrodes are arranged around the air inlets. The insulating support is 5-1,000mm thick and is made of an insulating material such as ceramic, quartz, polytetrafluoroethylene or polycarbonate. The frequency of a radio-frequency power supply applied between the upper electrodes and the lower electrodes is 0-10GHz. Thedistance between the upper electrodes and the lower electrodes is 2-1,000mm. the area diameter of the upper electrodes and the lower electrodes is 20-3,000mm. By adopting the plate electrode fixing structure, the scope of uniform distribution of a plasma starter can be widened, and particularly good edge uniformity can be achieved. When the plasma starter is used, no air discharging can be causedby the plate electrode fixing structure, and a vacuum chamber can meet vacuum requirements.

Description

technical field [0001] The invention relates to the technical field of plasma etching, in particular to a plate electrode fixing structure. Background technique [0002] Electrodes used in the plasma etching process have various forms, and selecting a reasonable and reliable electrode fixing form plays an important role in the stability of the plasma process. The flat electrode is a commonly used electrode form in processes such as plasma etching and deposition. figure 1 The shown peripheral multi-point method is used for fixing. The plate electrode 21 is fixed and suspended on the upper end of the process chamber by the electrode fixing peripheral hole 22 through bolts, and this method cannot be fixed in the middle of the chamber and cannot meet certain process requirements. This electrode fixing structure is prone to plasma inhomogeneity at the edge of the hole around the bolt fixing, and the field symmetry of the physical characteristics of this structure is relatively ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
Inventor 席峰李勇滔李楠张庆钊夏洋
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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