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A method for preparing copper-zinc-tin-sulfur thin film with four-element alloy target

A copper-zinc-tin-sulfur and four-element technology is applied in the field of preparation of copper-zinc-tin-sulfur thin films, which can solve the problems of difficulty in obtaining large crystal interface of copper-poor zinc-rich particles, zinc-tin vapor pressure, etc., so as to shorten production time and save heat energy. , the effect of protecting the environment

Active Publication Date: 2016-01-27
赣州优膜科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is because the vapor pressure of zinc and tin is high, and it is difficult to obtain a copper-poor zinc-rich large-grain crystal interface and a high-quality copper-zinc-tin-sulfur (selenium) film by conventional four-source or three-source co-evaporation methods

Method used

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  • A method for preparing copper-zinc-tin-sulfur thin film with four-element alloy target
  • A method for preparing copper-zinc-tin-sulfur thin film with four-element alloy target
  • A method for preparing copper-zinc-tin-sulfur thin film with four-element alloy target

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Experimental program
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Effect test

Embodiment 1

[0022] The four-element alloy circular sputtering target used in the present invention is Cu 2 ZnSnS 4 , the diameter of the target is 75 millimeters, the thickness is 6 millimeters, the atomic number ratio is 2:1.5:0.5:4, and the target is bonded on a copper substrate with a thickness of 2.5 millimeters and a diameter of 75 millimeters. The method includes the following steps:

[0023] (1) Using the sputtering method, a molybdenum layer is coated on a glass substrate with a thickness of 4mm, and the sputtering condition is that the initial vacuum degree is 10 -6 Torr, feed the argon gas of 20SCCM so that the vacuum pressure reaches 6mTorr, sputtering power 150W, sputtering time 45min, the thickness of the molybdenum layer is 800nm, and the resistivity of the molybdenum layer is 3 ohm centimeters;

[0024] (2) Heat the glass substrate plate deposited with the molybdenum layer to 300°C, adjust the sputtering power to 30W, and use a circular target Cu 2 ZnSnS 4 Sputtering on ...

Embodiment 2

[0029] The four-element alloy circular sputtering target used in the present invention is Cu 2 ZnSnS 4 , the diameter of the target is 25 millimeters, the thickness is 6 millimeters, the atomic number ratio is 2:0.5:1.5:4, and the target is bonded on a copper substrate with a thickness of 3 millimeters and a diameter of 25 millimeters. The method comprises the following steps:

[0030] (1) Using the sputtering method, a molybdenum layer is coated on a glass substrate with a thickness of 2 mm. The sputtering condition is that the initial vacuum degree is 10 -6 Torr, feed the argon gas of 20SCCM so that the vacuum pressure reaches 6mTorr, the sputtering power is 150W, the sputtering time is 45min, the thickness of the molybdenum layer is 200nm, and the resistivity of the molybdenum layer is 5 ohm centimeters;

[0031] (2) Heat the glass substrate plate deposited with the molybdenum layer to 350°C, adjust the sputtering power to 50W, and use the circular target Cu 2 ZnSnS 4 Sp...

Embodiment 3

[0036] The four-element alloy circular sputtering target used in the present invention is Cu 2 ZnSnS 4 , the diameter of the target is 100 millimeters, the thickness is 3 millimeters, the atomic number ratio is 2:1.5:1.5:4, and the target is bonded on a copper substrate with a thickness of 4 millimeters and a diameter of 100 millimeters. The method includes the following steps:

[0037] (1) Use the evaporation method to coat a molybdenum layer on a glass substrate with a thickness of 6mm. The evaporation condition is the initial vacuum degree of 10 -6 Torr, voltage 7KV, current 20mA, evaporation time 30min, the thickness of the molybdenum layer is 1000nm, and the resistivity of the molybdenum layer is 1 ohm cm;

[0038] (2) Heat the glass substrate plate deposited with the molybdenum layer to 400°C, adjust the sputtering power to 70W, and use a circular target Cu 2 ZnSnS 4 Sputtering on the substrate as a sputtering target to obtain a first layer of film, the sputtering tim...

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Abstract

The invention discloses a method for preparing a Cu-Zn-Sn-S film from a four-element alloy target material. The four-element alloy target material is Cu2ZnSnS4. The method comprises the following steps of (1), heating a glass base bottom plate with a molybdenum layer deposited to the temperature of 300 to 400 DEG C, using a sputtering method, adjusting the sputtering power to be 30 to 200W, and sputtering the glass base bottom plate to obtain a first layer of film, wherein the surface of the first layer of film is lack of copper and rich in zinc; (2), adjusting the temperature of the glass base bottom plate to be 400 to 600 DEG C, using the sputtering method, adjusting the sputtering power to be 80 to 200 W, and sputtering the glass base bottom plate to obtain a second layer of film, wherein the surface of the second layer of film is rich in copper; and (3), adjusting the temperature of the glass base bottom plate to be 400 to 600 DEG C, using the sputtering method, adjusting the sputtering power to be 30 to 200 W, and sputtering the glass base bottom plate to obtain a third layer of film, wherein the surface of the third layer of film is lack of copper, and then the Cu-Zn-Sn-S film is obtained.

Description

technical field [0001] The invention relates to a method for preparing a copper-zinc-tin-sulfur thin film, in particular to a method for preparing a copper-zinc-tin-sulfur thin film by using a four-element alloy circular target. Background technique [0002] As the most promising thin-film solar cell technology listed by the U.S. Department of Energy and other well-known solar cell research institutions, CIGS solar cell technology is attracting more and more researchers and investors with its extensive advantages . So far, the efficiency of copper indium gallium selenide solar cells has exceeded 20.3% in the laboratory, which is equivalent to that of single crystal silicon. At the same time, more and more companies and institutions are working on the trial production and commercial expansion of this technology. However, the industrialization of CIGS solar cells still lags behind monocrystalline silicon solar cells and other thin-film solar cells, such as cadmium telluride ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 徐从康
Owner 赣州优膜科技有限公司