Method for preparing SE (Selective Emitter) solar cell by utilizing sectional type mask graph
A mask pattern, segmented technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of high cost and large consumption of SE etching mask slurry
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Embodiment 1
[0056] Such as figure 2 , The thin grid line 1 is divided into segmented thin grid lines composed of a:b=1:1 by the straight-through type, and each segmented SE mask coating area adopts a rectangular shape, and the segmented SE mask coating covers The distribution between the regions can be arranged in a regular hexagon, so that the electrons in all the emission regions can be in the shortest distance, that is, within the radius of the equal diameter circle centered on the center of the segmented SE mask coating area. Each segment of SE mask paint is collected by the thin grid electrode connected to the covered area. This solution can reduce the slurry consumption of the SE etching mask fine grid line by 50% while ensuring the conversion efficiency.
Embodiment 2
[0058] Such as image 3 , The thin grid line is divided into a segmented SE mask coating area composed of a:b=1:6.26 by a straight-through type, each segment adopts a circular shape, and the distribution between the segmented SE mask coating area can be The regular hexagonal arrangement is adopted so that the electrons in all the emission areas can be divided by each segment within the shortest distance, that is, within the radius of the equal diameter circle centered on the center of the segmented SE mask coating area. Collected by wire electrodes. This solution can reduce 86.2% of the SE etching mask fine grid line slurry consumption while ensuring the conversion efficiency.
Embodiment 3
[0060] Such as Figure 4 , The thin grid line SE mask paste pattern is divided into a segmented SE mask coating coverage area composed of a:b=3:1 by a straight-through type, each segment adopts a bamboo shape, segmented SE mask coating The distribution between the coverage areas can be arranged in a regular hexagon, so that the electrons in all the emission areas can be divided by each segment within the shortest distance, that is, within the radius of the equal diameter circle centered on the center of the thin grid line. The SE mask paint is collected by the thin grid electrode connected to the covered area. This solution can reduce the slurry consumption of the SE etching mask fine grid line by 33.3% while ensuring the conversion efficiency.
[0061] In the above embodiments, a is the length of the segmented SE mask coating area, and b is the distance between the two adjacent segments of the segmented SE mask coating area. It can be seen that the SE slurry saving effect of Exa...
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