Power semiconductor module with embossed backplane and manufacturing method thereof
A technology for power semiconductors and backplanes, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as increased spacing between the bottom plate and cooling body, local tension, and increased spacing
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[0024] Figure 1A A section is shown perpendicularly through the base 4 , which has an upper side 41 and a lower side 42 opposite the upper side 41 . The upper side 41 and the lower side 42 are the sides with the largest area of the bottom plate 4 . Starting from the top side 41 , a plurality of embossed recesses 40 extend into the base plate 4 , in the region of which the thickness of the base plate 4 is each locally reduced. Furthermore, by way of example three circuit carriers 2 are arranged on the top side 41 , wherein at least one of the recesses 40 is located below each circuit carrier 2 .
[0025] in accordance with Figure 1A and the following Figure 2A The position of the recess 40 relative to the base plate 4 and the circuit carrier 2 is shown in the illustration (here only a schematic illustration). What is not shown here is that the circuit carriers 22 are bonded to the upper side 41 of the base plate 4 by means of connection elements arranged between each cir...
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Abstract
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