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Power semiconductor module with embossed backplane and manufacturing method thereof

A technology for power semiconductors and backplanes, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as increased spacing between the bottom plate and cooling body, local tension, and increased spacing

Active Publication Date: 2017-05-03
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, when mounting the modules on the heat sink, for example with the aid of fastening screws or other fastening elements, local tensions can result, which can lead to damage to the base plate and the cooling Increased spacing between bodies
[0005] If such heating-induced warpings occur in the circuit carrier or the gaps increase due to assembly, the resistance to heat transfer between base plate and cooling body increases significantly precisely in areas of particularly high heat generation

Method used

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  • Power semiconductor module with embossed backplane and manufacturing method thereof
  • Power semiconductor module with embossed backplane and manufacturing method thereof
  • Power semiconductor module with embossed backplane and manufacturing method thereof

Examples

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Embodiment Construction

[0024] Figure 1A A section is shown perpendicularly through the base 4 , which has an upper side 41 and a lower side 42 opposite the upper side 41 . The upper side 41 and the lower side 42 are the sides with the largest area of ​​the bottom plate 4 . Starting from the top side 41 , a plurality of embossed recesses 40 extend into the base plate 4 , in the region of which the thickness of the base plate 4 is each locally reduced. Furthermore, by way of example three circuit carriers 2 are arranged on the top side 41 , wherein at least one of the recesses 40 is located below each circuit carrier 2 .

[0025] in accordance with Figure 1A and the following Figure 2A The position of the recess 40 relative to the base plate 4 and the circuit carrier 2 is shown in the illustration (here only a schematic illustration). What is not shown here is that the circuit carriers 22 are bonded to the upper side 41 of the base plate 4 by means of connection elements arranged between each cir...

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Abstract

The invention involves a power semiconductor module (100) with a bottom plate (4) and circuit carrier (2).The bottom plate (4) has the upper side (41), the lower side (42), and the concave place (40) in the printed to the bottom plate (4).Extension.Circuit carrier (2) is arranged above the concave place (40) on the upper side (41) on the upper side (4) of the bottom plate, so that the concave place (40) is completely or at least partially or partially partially partially or partially partially or partially partially or partially partially or partially partially or partially partially or partially partially positioned4) Between the lower side (42).

Description

technical field [0001] The invention relates to a power semiconductor module with a base plate. Background technique [0002] In such power semiconductor modules, one or more circuit carriers are often arranged on the upper side of the base plate. These circuit carriers are equipped with one or more electronic components that need to be dissipated. The heat generated in these components during the operation of the power semiconductor modules is conducted to the cooling body through these circuit carriers and the base plate. For this purpose, the module uses the lower part of the base plate The side is pressed against the cooling body. Alternatively, a heat transfer medium such as thermal paste can be placed between the cooling body and the base plate. [0003] In order to dissipate heat from these components as effectively as possible, it is worthwhile to keep the distance between the base plate and the heat sink as small as possible. Since the circuit carrier is usually ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/13H01L21/58
CPCH01L23/3121H01L23/36H01L23/3735H01L21/4878H01L2924/0002H01L2924/00H01L21/50H01L23/40
Inventor 托尔斯滕·格勒宁马克·埃斯尔特克里斯琴·施泰宁格罗曼·伦纳特·特席尔布斯
Owner INFINEON TECH AG