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power semiconductor device

A technology of power semiconductor and bonding body, applied in the field of bonding body, can solve the problem of inability to track the plastic flow of the plates 2a and 2b

Inactive Publication Date: 2016-05-25
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, since the ductility of copper is greater than that of nickel, the plated layers 8a, 8b that are pressed against each other cannot follow the plastic flow of the plates 2a, 2b, and are split when they reach the breaking point.

Method used

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Embodiment approach

[0031] refer to figure 1 flow chart, figure 2 (a)~ figure 2 (c) and image 3 , the bonded body and its manufacturing method according to one embodiment of the present invention will be described. Among them, the first metal plate 101 and the second metal plate 102 used in this embodiment each have an oxide film formed on the surface thereof.

[0032] First, as the first process, such as figure 2 As shown in (a), an aqueous solution 103 as an example of a solution is dripped and placed on a joint portion forming region of a first metal plate (first joined member) 101 as an example of a joined member ( figure 1 Step S01). The aqueous solution 103 adopts an oxide film remover, an anti-oxidant (rust inhibitor) and a rheology control (viscosity inhibitor) agent, and is all water (H 2 O) liquid. Here, by dripping the aqueous solution 103 onto the first metal plate 101, the oxide film of the first metal plate 101 is removed to expose the new surface ( figure 1 step S02)...

Embodiment

[0074] Hereinafter, as an embodiment of the bonded body and its manufacturing method according to the present invention, for example, a power module (power semiconductor device) incorporated in an inverter control device is taken as an example and referred to Figure 6 , Figure 7 (a) and Figure 7 (b) Explain.

[0075] Such as Figure 6 , Figure 7 (a) and Figure 7 As shown in (b), the power module according to this embodiment is composed of the following components: the first lead frame 201 holds the power element T1 on the first die pad; the second lead frame 202 holds the control element T2 on On the second die pad; the heat sink 203 is fixedly bonded to the lower surface of the first lead frame via the insulating sheet 211; and the package body 204 is made of a sealing resin material.

[0076] Package 204 is formed to cover one end of first lead frame 201 including power element T1 and one end of second lead frame 202 including control element T2 , and to expose the...

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Abstract

The present invention provides a bonded body, a power semiconductor device and their manufacturing methods. First, an aqueous solution (103) containing an oxide film remover is placed on the joint portion forming region in the first metal plate (101). Next, with the aqueous solution (103) arranged, the second metal plate (102) is placed on the first metal plate (101). Then, a load is applied from the vertical direction to the joint portion forming region between the first metal plate (101) and the second metal plate (102), thereby joining the first metal plate (101) and the second metal plate (102) to each other. A junction part (110) is formed, and a junction body is manufactured.

Description

technical field [0001] The present invention relates to a technique for joining members to be joined. In particular, the present invention relates to a junction body, a power semiconductor device, and methods of manufacturing them. Background technique [0002] Conventionally, as a joining method for joining dissimilar or similar metals, there is a cold-compression bonding method in which a load is applied to joined members (for example, refer to Patent Document 1). [0003] Below, refer to Figure 8 (a)~ Figure 8 (c) A conventional cold compression bonding method will be described. [0004] First, if Figure 8 As shown in (a), the board body 2a in which the plating layer 8a was formed in the front and back, and the board body 2b in which the plating layer 8b was formed in the front and back are overlapped. Here, the plating layers 8a, 8b are made of nickel (Ni), and the plate bodies 2a, 2b are made of copper (Cu). [0005] Next, if Figure 8 (b) and Figure 8 As shown i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/00H01L23/50H01L21/60
CPCH01L23/4334H01L23/49537H01L23/49575H01L21/4825H01L21/4835H01L2224/32245H01L2224/48247H01L2224/73265H01L2924/13091H01L2224/48091H01L2924/13055B23K20/023B23K20/16B23K20/227B23K20/233B23K35/002B23K35/004B23K35/007H01L2924/1305H01L24/73H01L2924/181B23K2101/18B23K2101/42B23K2103/04B23K2103/10B23K2103/12H01L2924/00012H01L2924/00014H01L2924/00H01L21/4842H01L23/495
Inventor 南尾匡纪笹冈达雄
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD