Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of wo3 electrochromic thin film

An electrochromic, thin-film technology, applied in instrumentation, nonlinear optics, optics, etc., can solve the problems of rarely disclosed thin films, and achieve the effects of low cost, uniform coloring, and stable deposition rate

Inactive Publication Date: 2015-10-14
NANJING UNIV OF SCI & TECH
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Although currently published information about WO 3 There are many Chinese patents for thin film preparation methods, but the preparation of WO by radio frequency magnetron sputtering 3 Thin film patents are rarely published

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of wo3 electrochromic thin film
  • A kind of preparation method of wo3 electrochromic thin film
  • A kind of preparation method of wo3 electrochromic thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034]Using radio frequency magnetron sputtering deposition thin film technology, with WO 3 Ceramic is used as the cathode target, and WO is deposited on ITO conductive glass 3 Thin film, the target is a circular WO with a diameter of 76.2mm and a thickness of 3mm 3 ceramic target. The specific operation steps are:

[0035] Step 1. ITO conductive glass pretreatment: immerse the ITO conductive glass substrate in acetone, absolute ethanol and deionized water in sequence for ultrasonic cleaning for 10 minutes, and then dry it with cold air;

[0036] Step 2. Fix the cleaned ITO glass on the RF magnetron sputtering substrate platform, with the side coated with the ITO film facing down. WO 3 The ceramic target is installed on the target position in the vacuum chamber of the radio frequency magnetron sputtering equipment. The target base distance was adjusted to 5cm. After the vacuum chamber is closed, turn on the mechanical pump, open the side pumping valve, and evacuate the v...

Embodiment 2

[0043] Using radio frequency magnetron sputtering deposition thin film technology, with WO 3 Ceramic is used as the cathode target, and WO is deposited on ITO conductive glass 3 Thin film, the target is a circular WO with a diameter of 76.2mm and a thickness of 3mm 3 ceramic target. The specific operation steps are:

[0044] Step 1. ITO conductive glass pretreatment: immerse the ITO conductive glass substrate in acetone, absolute ethanol and deionized water in sequence for ultrasonic cleaning for 20 minutes, and then dry it with cold air;

[0045] Step 2. Fix the cleaned ITO glass on the RF magnetron sputtering substrate platform, with the side coated with the ITO film facing down. WO 3 The ceramic target is installed on the target position in the vacuum chamber of the radio frequency magnetron sputtering equipment. The target base distance was adjusted to 10cm. After the vacuum chamber is closed, turn on the mechanical pump, open the side pumping valve, and evacuate the...

Embodiment 3

[0052] Using radio frequency magnetron sputtering deposition thin film technology, with WO 3 Ceramic is used as the cathode target, and WO is deposited on ITO conductive glass 3 Thin film, the target is a circular WO with a diameter of 76.2mm and a thickness of 3mm 3 ceramic target. The specific operation steps are:

[0053] Step 1. ITO conductive glass pretreatment: immerse the ITO conductive glass substrate in acetone, absolute ethanol and deionized water in sequence for ultrasonic cleaning for 15 minutes, and then dry it with cold air;

[0054] Step 2. Fix the cleaned ITO glass on the RF magnetron sputtering substrate platform, with the side coated with the ITO film facing down. WO 3 The ceramic target is installed on the target position in the vacuum chamber of the radio frequency magnetron sputtering equipment. The target base distance is adjusted to 7.5cm. After the vacuum chamber is closed, turn on the mechanical pump, open the side pumping valve, and evacuate the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

WO3 films have the advantages of being large in visible light transmissivity adjusting range, high in coloration efficiency, short in response time, good in circulation stability, friendly to environment and the like. Electrochromic devices based on WO3 films can be widely used on buildings, automobiles and the like to serve as energy-saving smart windows. The invention relates to a WO3 photoelectric functional material and provides a method for preparing WO3 electrochromic films which are good in film quality, uniform in thickness and short in color-changing response time. According to the method, WO3 serves as a target, and electrochromic WO3 films are prepared on transparent conductive indium tin oxide (ITO) glass substrates through a radio frequency magnetron sputtering method. The method is simple in preparation process, easy to control, good in repeatability, stable in deposition rate and capable of being produced on a large scale conveniently.

Description

technical field [0001] The invention belongs to WO 3 Electrochromic thin film preparation technology, especially a kind of WO 3 Preparation method of electrochromic thin film. Background technique [0002] The electrochromic effect refers to the reversible change phenomenon that the material presents a colored state with a low light transmission rate and a faded state with a high light transmission rate under the action of an external electric field or current. In the 1960s, S.K.Ded observed the phenomenon of electrochromism and used amorphous WO for the first time 3 Thin films make electrochromic devices. Since then, people have discovered MoO 3 , V 2 o 5 、TiO 2 , NiO and other inorganic electrochromic materials and organic electrochromic materials such as polyaniline. As an important part of electrochromic materials, electrochromic films have low operating voltage, low energy consumption, no visual restrictions, easy matching with integrated circuits, memory functi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/153
Inventor 邹友生张亦弛邓丽琴楼冬汪海鹏窦康涂承君万兰风殷胜
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com