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Thin film transistor baseplate and preparation method thereof

A technology of thin-film transistors and substrates, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., and can solve the problems that static electricity cannot be eliminated at any time and cannot be effectively eliminated

Inactive Publication Date: 2013-08-14
WGTECH JIANGXI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned anti-static treatment requires an additional process, and at the same time, the generated static electricity cannot be eliminated at any time, so that the static electricity cannot be effectively eliminated

Method used

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  • Thin film transistor baseplate and preparation method thereof
  • Thin film transistor baseplate and preparation method thereof

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preparation example Construction

[0029] Please also see figure 2 , the preparation method of the thin film transistor substrate 100 of an embodiment, comprises the following steps:

[0030] Step S110 , forming a protection layer 30 on the substrate 10 , the material of the protection layer 30 is silicon dioxide.

[0031] In this embodiment, the substrate 10 is pretreated to remove dirt and dust on the surface of the substrate 10 before forming the protective layer 30 . The pretreatment steps are as follows: first clean the base 10 with pure water, blow off the water on the surface of the base 10 with cold wind, then blow the base 10 with hot air to dry, and then perform quality inspection on the dried base 10, if the base 10 is If the surface is free of dirt and scratches, the substrate 10 is qualified and can be prepared for coating.

[0032] In this embodiment, the protective layer 30 is formed by vacuum magnetron sputtering, and the process parameters of the vacuum magnetron sputtering protective layer ...

Embodiment 1

[0038] The substrate 10 is pretreated to remove dirt and dust on the surface of the substrate 10 . The pretreatment steps are as follows: first clean the base 10 with pure water, blow off the water on the surface of the base 10 with cold wind, then blow the base 10 with hot air to dry, and then check the quality of the dried base 10, if the base 10 is If the surface is free of dirt and scratches, the substrate 10 is qualified and can be prepared for coating.

[0039] Vacuum sputtering of SiO on the substrate 10 using a WG vacuum magnetron sputtering coating machine 2 The film forms the protective layer 30 . The target material is polysilicon, and there are two target materials in total. During the vacuum sputtering process, the heating temperature of the substrate 10 is 50°C, the heating time of the substrate 10 is 450S, the running speed of the substrate 10 is 13.3mm / S, the coating time is 150S, and the vacuum degree of the coating chamber is 3.5×10 -1 Pa, the total air pr...

Embodiment 2

[0042] The substrate 10 is pretreated to remove dirt and dust on the surface of the substrate 10 . The pretreatment steps are as follows: first clean the base 10 with pure water, blow off the water on the surface of the base 10 with cold wind, then blow the base 10 with hot air to dry, and then perform quality inspection on the dried base 10, if the base 10 is If the surface is free of dirt and scratches, the substrate 10 is qualified and can be prepared for coating.

[0043] Vacuum sputtering of SiO on the substrate 10 using a WG vacuum magnetron sputtering coating machine 2 The film forms the protective layer 30 . The target material is polysilicon, and there are two target materials in total. During the vacuum sputtering process, the heating temperature of the substrate 10 is 80°C, the heating time of the substrate 10 is 270S, the running speed of the substrate 10 is 22.2mm / S, the coating time is 90S, and the vacuum degree of the coating chamber is 2.5×10 -1 Pa, the tota...

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Abstract

A film transistor baseplate includes a substrate, a protective layer and a conducting layer, wherein the protective layer is arranged on the substrate in a stacked manner, and is made of silicon dioxide; and the conducting layer is arranged on the protective layer in a stacked manner, and is made of indium tin oxide. According to the film transistor baseplate, the protective layer and the conducting layer are arranged on the substrate, so that surface resistance of the substrate is lowered, dissipation of generated static electricity is controlled, and leakage of the static electricity is accelerated, as a result, the generated static electricity is enabled to leak via the surface or the interior of the substrate, collection of the static electricity is prevented, and consequentially the purpose of static electricity prevention is realized. The invention further provides a preparation method for the film transistor baseplate.

Description

【Technical field】 [0001] The invention relates to a thin film transistor substrate and a preparation method thereof. 【Background technique】 [0002] After the thin-film transistor (TFT) substrate is filled with liquid, bonded, and thinned, it will be processed many times in the process of handling, cutting, wiping, cleaning, testing, assembling and other processes. Static electricity is easily generated during the process. [0003] At present, the industry usually uses a series of external static electricity protection measures such as ion wind static eliminators to remove static electricity generated during operation when TFT substrates are processed in the post-process. However, the above-mentioned antistatic treatment requires an additional process, and at the same time, the generated static electricity cannot be eliminated at any time, so that the static electricity cannot be effectively eliminated. 【Content of invention】 [0004] In view of the above situation, it i...

Claims

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Application Information

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IPC IPC(8): H01L23/60H01L23/00
Inventor 易伟华杨会良张芙嘉刘文高
Owner WGTECH JIANGXI
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