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Preparation method for large-size 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) thin crystal

A triisopropylsilyl and ethynyl technology, applied in 6 fields, can solve the problems of poor device performance uniformity, small crystallite size, and integration limitations of devices with the same performance in OFET arrays, and achieve the effect of good application potential.

Inactive Publication Date: 2013-08-21
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the crystallite size prepared by inkjet printing is small, and the device performance uniformity of the OFET array is poor due to the large difference in the size and structural orientation of each crystallite, which has certain limitations for the integration of large-area devices with the same performance.

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  • Preparation method for large-size 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) thin crystal
  • Preparation method for large-size 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) thin crystal
  • Preparation method for large-size 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) thin crystal

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Embodiment Construction

[0023] The present invention will be further explained below in conjunction with more specific embodiments, but it should be pointed out that the method for preparing the large-size TIPS-PEN organic thin crystals of the present invention is not limited to this specific process or ratio. It is obvious to those skilled in the art that the following description can be directly applied to other process parameters not specified here even without any adjustment or modification.

[0024] A method for preparing large-size 6,13-bis(triisopropylsilylethynyl)pentacene thin crystals includes the following steps:

[0025] 1) Dissolve high-purity 6,13-bis(triisopropylsilylethynyl)pentacene (usually, purity ≥99%) in a mixed solvent of n-dodecane and chlorobenzene to form a concentration 0.6 wt.% solution, in which the volume ratio of n-dodecane to chlorobenzene is 1:2.5.

[0026] Studies have found that the volume ratio of the two mixed solvents and the concentration of the solution are directly r...

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Abstract

The invention discloses a preparation method for a large-size 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) thin crystal. The preparation method is characterized by blending a 6,13-bis(triisopropylsilylethynyl)pentacene solution by simply taking chlorobenzene and n-dodecane as a mixed solvent according to a certain volume ratio, placing the solution in a closed petri dish in the growth process of the thin film for regulating the growth conditions, and growing the organic thin crystal with the size up to millimeters. The organic large-size TIPS-PEN thin crystal prepared by the preparation method has good application potential on the aspect of producing low-cost and high-performance integrated electronic devices.

Description

Technical field [0001] The invention relates to a preparation method of 6,13-bis(triisopropylsilylethynyl) pentacene thin crystals, in particular to a large-size 6,13-bis(triisopropylsilylethynyl) pentacene Preparation method of benzene thin crystals. Background technique [0002] In recent years, organic field-effect transistors (organic field-effect transistors, OFETs) based on π-conjugated molecules and polymer semiconductors, due to their large area, low-cost device fabrication and good flexibility, have a great advantage in the field of electronic information. The application potential has aroused widespread research interest. However, organic polycrystalline thin films usually used in OFETs have a large number of grain boundaries and disordered molecular arrangements, which have great limitations on charge transfer. Organic semiconductor single crystals have a high degree of order in their internal molecular arrangements and the absence of crystals. In the world, the prep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/54C30B7/06
Inventor 肖宇张发培李峰周国庆
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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