Encoding method and encoder based on resistance random access memory
A technology of resistive memory and coding method, applied in the direction of machine execution device, etc., can solve problems such as limitation, and achieve the effects of simple operation, low operating voltage, high accuracy and reliability
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[0021] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
[0022] The principle of the present invention is based on the resistive switching phenomenon of metal oxides, which is caused by the connection and disconnection of the filament-shaped conductive channels existing in the metal oxides. The conductive channel is formed by oxygen vacancies. Under the action of an external voltage, new oxygen vacancies are formed or oxygen ions conform to existing defects, which leads to a change in the resistance value of the resistive switching device. Applying different set voltages will result in different shapes of filaments, thus determining different low-resistance state resistance values. In the same way, corresponding to different sh...
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