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Encoding method and encoder based on resistance random access memory

A technology of resistive memory and coding method, applied in the direction of machine execution device, etc., can solve problems such as limitation, and achieve the effects of simple operation, low operating voltage, high accuracy and reliability

Inactive Publication Date: 2013-08-21
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the prior art, the research on using multi-valued logic to implement traditional CMOS functions on a device is very limited. Due to the demand for high performance and high integration, we hope to obtain logic devices with high speed, low operating voltage and current , simple structure, suitable for integration, low cost and other functions, so how to use the logic function of new devices and generate appropriate circuits is a very challenging research topic

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  • Encoding method and encoder based on resistance random access memory
  • Encoding method and encoder based on resistance random access memory

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Embodiment Construction

[0021] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0022] The principle of the present invention is based on the resistive switching phenomenon of metal oxides, which is caused by the connection and disconnection of the filament-shaped conductive channels existing in the metal oxides. The conductive channel is formed by oxygen vacancies. Under the action of an external voltage, new oxygen vacancies are formed or oxygen ions conform to existing defects, which leads to a change in the resistance value of the resistive switching device. Applying different set voltages will result in different shapes of filaments, thus determining different low-resistance state resistance values. In the same way, corresponding to different sh...

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Abstract

The invention provides an encoding method and an encoder based on a resistance random access memory. The encoding method comprises the following steps of (1) adding n types of established voltages to the resistance random access memory, carrying out set operation on the resistance random access memory, and enabling the resistance random access memory to be in n types of low resistance states, wherein the n is larger than or equal to 2, (2) adding m types of reset voltages to the resistance random access memory, carrying out reset operation on the resistance random access memory, enabling the n types of the low resistance states to respectively form m types of high resistance states, and outputting the n*m types of the high resistance states, wherein the m is larger than or equal to 2. According to the encoding method, a traditional CMOS is replaced, and the function of complex encoding is achieved. The invention further provides an encoder based on the resistance random access memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits and its manufacture, in particular to an encoding method and an encoder based on a resistive variable memory. Background technique [0002] Traditional computers usually use binary logic to implement information processing and storage functions, and its information processing (or calculation) and storage are implemented in different devices or functional modules, and the operation process is usually a step-by-step serial process. Dozens or even hundreds of MOS transistors are often required to complete a simple arithmetic operation or encoding and decoding operations; therefore, technicians in the industry proposed to use the multi-valued phenomenon and multi-valued logic generated by metal oxides in the resistive switching process, Achieve higher efficiency and simpler structure. [0003] In the prior art, the research on using multi-valued logic to implement traditiona...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F9/30
Inventor 康晋峰龙云李秀红高滨陈冰
Owner PEKING UNIV